High-performance monolithic triaxial piezoresistive shock accelerometers

Dong, Pinliang; Li, Xinxin; Yang, Huang‐Hao; Bao, Haifei; Zhou, Wei; Li, Shengyi; Feng, Songlin

doi:10.1016/j.sna.2007.10.032

Cited by 52 publications

(55 citation statements)

References 11 publications

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“…The desired properties of microaccelerometers include high sensitivity, maximum operating range, wide frequency response, high resolution, good linearity, low offset, shock survival ability and low cross-axis sensitivity. There are several mechanisms for acceleration sensing such as piezoresistive (Roylance and Angell 1979;Allen et al 1989;Tschan et al 1991;Riethmuller et al 1992;Burrer et al 1994;Kim et al 1995;Chen et al 1997;Takao and Matsumoto 1998;Plaza et al 1998;Kwon and Park 1998;Patridge et al 2000;Huang et al 2005;Park et al 2006;Amarasinghe et al 2005;Kal et al 2006;Eklund and Shkel 2007;Dong et al 2008;Engesser et al 2009;Ravi Sankar et al 2009a, b), piezoelectric (Kobayashi et al 2010), capacitive (Hsu et al 2009;Farahani et al 2009;Ravi Sankar et al 2011), tunneling (Hsien et al 1998), etc. Each of the above acceleration sensing mechanisms has its own merits and demerits.…”

Section: Introductionmentioning

confidence: 99%

Design, fabrication and testing of a high performance silicon piezoresistive Z-axis accelerometer with proof mass-edge-aligned-flexures

2011

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This paper presents design, fabrication and testing of a quad beam silicon piezoresistive Z-axis accelerometer with very low cross-axis sensitivity. The accelerometer device proposed in the present work consists of a thick proof mass supported by four thin beams (also called as flexures) that are connected to an outer supporting rim. Cross-axis sensitivity in piezoresistive accelerometers is an important issue particularly for high performance applications. In the present study, low cross-axis sensitivity is achieved by improving the device stability by placing the four flexures in line with the proof mass edges. Various modules of a finite element method based software called CoventorWare TM was used for design optimization. Based on the simulation results, a flexure thickness of 30 lm and a diffused resistor doping concentration of 5 9 10 18 atoms/cm 3 were fixed to achieve a high prime-axis sensitivity of 122 lV/Vg, low cross-axis sensitivity of 27 ppm and a relatively higher bandwidth of 2.89 kHz. The designed accelerometer was realized by a complementary metal oxide semiconductor compatible bulk micromachining process using a dual doped tetra methyl ammonium hydroxide etching solution. The fabricated accelerometer devices were tested up to 13 g static acceleration using a rate table. Test results of fabricated devices with 30 lm flexure thickness show an average prime axis sensitivity of 111 lV/Vg with very low cross-axis sensitivities of 0.652 and 0.688 lV/Vg along X-axis and Y-axis, respectively.

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Section: Introductionmentioning

confidence: 99%

Design, fabrication and testing of a high performance silicon piezoresistive Z-axis accelerometer with proof mass-edge-aligned-flexures

2011

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“…Silicon microfabrication technique makes it possible to reduce size of the sensor as well as the production cost through batch fabrication, making it suitable for mass production. In previous researches, fabricated high-g accelerometers measure the acceleration in one-axis [1][2][3][4][5][6] or three-axis with three proof masses [7]. Compared with a three-axis accelerometer with multiple proof masses, a monolithic three-axis accelerometer is free from axis-alignment error and has advantages of smaller device size, better uniformity of the measurement signals in three sensing directions [7].…”

Section: Introductionmentioning

confidence: 99%

“…In previous researches, fabricated high-g accelerometers measure the acceleration in one-axis [1][2][3][4][5][6] or three-axis with three proof masses [7]. Compared with a three-axis accelerometer with multiple proof masses, a monolithic three-axis accelerometer is free from axis-alignment error and has advantages of smaller device size, better uniformity of the measurement signals in three sensing directions [7]. Design and analysis of monolithic three axis high-g accelerometers have been reported before [8][9][10], however, to our best knowledge, no actual device and experimental results were reported.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

Jung

Kwon

Kim

2017

Micro and Nano Syst Lett

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We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4 mm × 1.4 mm × 0.51 mm. Experimental results show that the sensitivity in X-, Y-and Z-axes are 0.2433, 0.1308 and 0.3068 mV/g/V under 5 V applied and the resolutions are 24.2, 29.9 and 25.4 g, respectively.

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“…To delay the nods lifetime, the nods directed a large segment of energy research towards seeking alternative sources to power and maintain them. As a candidate, the vibration energy is a popular choice due to its pervasive existence [3][4][5]. Because of small size, low power consumption (milliwatt level), low unit cost, and the possibility of circuits' integration, micro-piezoelectric vibration energy harvesting is regarded as one of the promising device to power for wireless network nodes [6].…”

Section: Introductionmentioning

confidence: 99%