High Performance Nanostructured Silicon–Organic Quasi p–n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer

Liu, Yuan; Zhang, Zhiguo; Xia, Zhouhui; Zhang, Jie; Liang, Feng; Li, Yongfang; Song, Tao; Yu, Xuegong; Lee, Shuit‐Tong; Sun, Baoquan

doi:10.1021/acsnano.5b05732

Cited by 77 publications

(73 citation statements)

References 48 publications

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“…[28][29][30][31][32] Metal-oxide, fluoride, and polymerbased DF-CSCs are easy to deposit at an acceptable cost (e.g., thermal evaporation, spin coating, or atomic layer deposition, ALD); however, most of them suffer from a poor stability, either chemically or thermally, [11,16,18,23,24,33] which limits their industrial applications. When the metal is in direct contact with the silicon surfaces, very large densities of electronic states at the interface can be introduced into 8-hydroxyquinolinolato-lithium (Liq), perylene diimide, have also been developed.…”

Section: Introductionmentioning

confidence: 99%

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Yang

Aydın

et al. 2018

Advanced Energy Materials

133

142

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Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Yang

Aydın

et al. 2018

Advanced Energy Materials

133

142

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“…[19,20] In recent years, we have witnessed the rapid progress of Si/PEDOT:PSS heterojunction solar cells. [22,23] So far, simple Si/Al contact or Ga:In eutectic still accounts for the vast majority. [21] In addition, most research works are focused on front organic/Si junction contact.…”

Section: Doping-free Asymmetrical Silicon Heterocontact Achieved By Imentioning

confidence: 99%

“…[12,23] As shown in Figure S1 in the Supporting Information, under illumination, holes can be readily extracted from front Si to PEDOT:PSS with favorable energy band structure. [12,23] As shown in Figure S1 in the Supporting Information, under illumination, holes can be readily extracted from front Si to PEDOT:PSS with favorable energy band structure.…”

Section: Doping-free Asymmetrical Silicon Heterocontact Achieved By Imentioning

confidence: 99%

Doping‐Free Asymmetrical Silicon Heterocontact Achieved by Integrating Conjugated Molecules for High Efficient Solar Cell

Liu

et al. 2017

Advanced Energy Materials

Self Cite

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Organic conjugated molecule/silicon (Si) heterojunction has been widely investigated to build up an asymmetrical heterocontact for efficient photovoltaics. However, it is still unclear how the organic molecular structures can affect their electronic coupling interaction with Si. Here, two widely explored electron acceptors of poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200) and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) are used to build up asymmetrical Si heterocontact to investigate their electronic coupling interaction. It is found that PCBM displays different electronic coupling with Si from N2200, which is ascribed to their various physical distance with Si based on a systematic and detailed density functional theory calculation. Organic layer incorporation not only suppresses the surface charge recombination velocity but also leads to an Ohmic contact between Si and Al. Therefore, a doping‐free organic/Si heterojunction photovoltaic with a power conversion efficiency of 14.9% is achieved with PCBM layer. This work discloses a key factor affecting organic/Si electronic coupling interaction, which helps build up high quality Si heterocontact for solar cells and other optoelectronic devices. Furthermore, the simplified heterocontact achieved by a low temperature, solution processed, and lithography‐free steps has a dramatic improvement on conventional diffusion doped‐silicon one at high temperature.

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“…Currently hybrid organicinorganic nanocomposites are considered as materials being suitable for a wide range of applications [1]. The electroluminescent devices [2][3][4], thin field effect transistors [5,6], solar cells [7][8][9][10][11], etc. were prepared, characterized and reported.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of organic layers deposited on porous-patterned Si surface

et al. 2016

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Abstract. The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1y2) and metamizole sodium (pH=6y7). Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.

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High Performance Nanostructured Silicon–Organic Quasi p–n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer

Cited by 77 publications

References 48 publications

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Doping‐Free Asymmetrical Silicon Heterocontact Achieved by Integrating Conjugated Molecules for High Efficient Solar Cell

Growth and characterization of organic layers deposited on porous-patterned Si surface

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