High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

IEEE Electron Device Lett.

Kampitsis

et al. 2020

Self Cite

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of the Tri-Anode structure is also often believed to hinder the device switching performance. In this work, we demonstrate that, on the contrary, the Tri-Anode architecture significantly enhances the device switching performance with respect to conventional planar SBDs, as shown by a substantial decrease in the recovery charge and an improvement in frequency response. The Tri-Anode SBDs excellent static and dynamic performance is then applied to a real circuit to demonstrate a monolithically integrated high-frequency Full Bridge Rectifier. These results show the potential of Tri-Anode SBDs for high-efficiency and fast-switching power integrated circuits.

Section: Introductionmentioning

confidence: 99%

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

IEEE Electron Device Lett.

Kampitsis

et al. 2020

Self Cite

“…While this sequence is consistent for all the architectures considered, the capacitance value and the position of the steps strongly depend on the device design. In particular, as the nanowire width is reduced, the Tri-Gate and Tri-Anode turn-on shifts closer to 0 V, as a result of the variation in the nanowire threshold voltage [17]- [19]. Additionally, while the capacitance per each nanowire indeed increases due to the 3D structure, leading to a better control as shown by the excellent Tri-Anode blocking performance, the overall device capacitance decreases.…”

Section: Device Characterizationmentioning

confidence: 99%

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Kampitsis

Yildirim

et al. 2020

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“…Recently tri-gate structures are attracting considerable attention due to their better gate control [15]- [17] and enhanced VBR [18]- [20] compared to planar devices, without degrading the RON [17]. In addition, tri-gates allow a controllable positive shift of VTH by changing the fin width, due to the partial relaxation of the AlGaN barrier and the enhanced electrostatic control from the tri-gate sidewalls [15]- [21].…”

Section: Device Design and Fabricationmentioning

confidence: 99%

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Zhu

IEEE Electron Device Lett.

et al. 2019

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In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density (I D). The tri-gate structure offered excellent channel control, enhancing the VTH from +0.3 V for the recessed to +1.4 V for the recessed tri-gate, along with a much reduced hysteresis in VTH, and a significantly increased transconductance (gm). Additional conduction channels at the sidewalls of the tri-gate trenches compensated the degradation in ON resistance (RON) from the gate recess, resulting in a small RON of 7.32 ± 0.26 Ω•mm for LGD of 15 μm, and an increase in the maximum output current (I D max). In addition, the tri-gate inherently integrates a gateconnected field-plate (FP), which improved the breakdown voltage (VBR) and reduced the degradation in dynamic RON. With proper passivation techniques, these devices could be very promising as high performance power switches for future power applications.