High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride

Luo, Tzy-Jiun M.; Alshareef, Husam N.; Karamcheti, A.; Watt, V.H.C.; Brown, George; Jackson, Maxx; Huff, Howard R.; Evans, B.; Kwong, D. L.

doi:10.7567/ssdm.2000.a-5-2

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“…N/O stack gate dielectrics as indicated in Fig. 1(a) were produced by a process illustrated in [9]. The control oxide films were formed by rapid thermal oxidation.…”

Section: Methodsmentioning

confidence: 99%

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hónɡ

Hou

et al. 2002

IEEE Electron Device Lett.

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A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages ( 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with 33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs. Index Terms-Dielectric films, hole tunneling, MOSFETs, oxynitride/oxide (N/O), silicon oxynitrides.

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“…N/O stack gate dielectrics as indicated in Fig. 1(a) were produced by a process illustrated in [9]. The control oxide films were formed by rapid thermal oxidation.…”

Section: Methodsmentioning

confidence: 99%

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hónɡ

Hou

et al. 2002

IEEE Electron Device Lett.

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High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride

Cited by 1 publication

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Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

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