High-performance non-volatile memory devices from metallomacrocyclic organic micro/nanostructure: Control via molecular manipulation

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application

“…Research on metal oxide nanomaterials has gained considerable interest in various applications. − Nonvolatile memory (NVM) is one of the applications that has increased tremendously in recent years due to the growing demand for faster and more efficient storage solutions. − RRAM has sparked significant attention among the existing NVM devices due to its high-speed operation, excellent endurance, simple structure, low power consumption, nondestructive readouts feature, and compatibility with CMOS technology. , Resistive switching (RS) in RRAM devices is driven to a low resistance state (LRS) and a high resistance state (HRS) through the SET and RESET processes, which correspond to the applied voltage . There are two types of RRAM devices: (i) unipolar RS (URS) and (ii) bipolar RS (BRS).…”