High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Wang, Hsiang-Chun; Pu, Taofei; Li, Xiaobo; Liu, Chia-Hao; Wu, Junye; Yang, Jiaying; Zhang, Ziyue; Lu, Youming; Wang, Qi; Song, Liang; Chiu, Hsien‐Chin; Ao, Jin‐Ping; Liu, Xinke

doi:10.1109/ted.2022.3193991

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…GaN has the advantages of large band gap, high electron mobility, low on-resistance and adjustable bandwidth, which makes it have broad application prospects in display lighting, 5G communication, power electronics, UV sterilization and other elds [1][2][3][4][5]. Due to the natural high-density two-dimensional electron gas (2DEG) at the AlGaN/GaN heterostructure interface, most of the GaN power devices currently under development are based on horizontal AlGaN/GaN high electron mobility transistors(HEMT).…”

Section: Introductionmentioning

confidence: 99%

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

Wang

Lin

Wang

et al. 2023

Preprint

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The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric field position shifts from the edge of gate to the edge of drain. During the process of peak electric field transfer, the gate electric field gradually saturates, and the increase rate of peak electric field shows a turning point at 350V (Vd < 600 V). As the voltage further increases (Vd > 600 V), the increase rate of the drain electric field gradually slows down and tends to saturation, and the corresponding saturated gate electric field begins to increase. The uniform, quasi- linear, and step distributions of three different C acceptor in the buffer layer exhibit different degrees of current collapse under 1 ms bias stress, with values of 21.8%, 12.7%, and 12.8%, respectively. In this work, we have provided appropriate explanations for the above phenomena.

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Section: Introductionmentioning

confidence: 99%

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

Wang

Lin

Wang

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Thus, if NbN is used as a gate contact material in AlGaN/GaN HEMT, the resultant device would be of MSHEMT type. Also, in p-GaN/AlGaN/GaN normallyoff HEMT, NbN can serve as a gate contact material in place of Nickel [16]. The work function of NbN is less than Nickel's work function, which is 5.1 eV and it has been shown in literature that lower work function of gate metal leads to lower gate leakage current in case of normally-off p-GaN/AlGaN/GaN HEMT [17], [18].…”

Section: Introductionmentioning

confidence: 99%