High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Huang, Yi; Li, Jinpeng; Chen, Weizhong; Wang, Jin; Xue, Junjun; Cai, Qing; Chen, Dunjun; Zhang, Rong

doi:10.1007/s11082-021-02786-2

Cited by 9 publications

(6 citation statements)

References 28 publications

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“…In simulation, the Shockley-Read-Hall recombination model, the polarization model, the nitride specific high field mobility model, the Albrecht low field mobility mode, the hot carrier injection model and the impact ionization model are adopted. In buffer layer, a donor-like trap with trap energy level of 3.2 eV above valence band and trap density of 1×10 18 cm -3 , as well as an acceptor-type trap with energy level of 0.36 eV below the conduction band and trap density of 7×10 17 cm -3 are taken into account [5]. The impact ionization parameters are same as the reference [5].…”

Section: Structure Parameters and Physical Modelsmentioning

confidence: 99%

“…Because of the excellent properties for (Al)GaN based Ⅲ-nitride semiconductor materials such as wide band energy, high-electron saturation velocity, large mobility, high breakdown electric field and better thermal stability, which have been widely used in opto-electronic devices, high temperature high power devices and high frequency microwave devices [1,2]. In the last few decades, GaN-based high electron mobility transistors (HEMTs) have attracted more and more attention thanks to their outstanding advantages [3][4][5][6]. As a result of spontaneous and piezoelectric polarization effects, a high density two-dimensional electron gas (2DEG) about 10 13 /cm 2 is formed at the interface of AlGaN/GaN hetero-junction.…”

Section: Introductionmentioning

confidence: 99%

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Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

et al. 2023

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An ultra-thin double barrier enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) with p-type buffer layer and Si 3 N 4 /graded p-AlGaN gate is proposed and investigated by Silvaco TCAD. The simulation results show that the designed HEMT can obtain a high threshold voltage over 5.0 V and large gate swing. The maximum gate leakage current is 3.11×10 -4 A/mm at 30 V gate voltage, which decreases four orders of magnitude compared to the conventional double barrier HEMTs. Due to the p-type buffer layer, the cut-off frequency for the proposed HEMT is raised over three-times compared to the conventional double barrier structure HEMT with n-type buffer layer. Meanwhile the designed HEMT exhibits high breakdown voltage and large current-gain. Moreover, the impacts of Si 3 N 4 layer thickness under gate and GaN channel layer thickness are analyzed. Both layers play significantly roles in obtaining high threshold voltage for the device by adjusting the conduction band energy of AlGaN/GaN interface quantum well.

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Section: Structure Parameters and Physical Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

et al. 2023

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“…24) Alternatively, Huang et al showcased a normally-off p-GaN gate InAlN/GaN HEMT to enhance on-resistance, saturation current, and device stability. 25) In addition, the selected p-GaN gate region etched, which extends towards the drain electrode, is a viable option for improving the efficiency and reliability. 26) The plasma treatment can enable the etchingfree fabrication of GaN power devices, dramatically increasing the device performance, where the hydrogenated p-GaN was also used as an edge termination for GaN power devices.…”

Section: Introductionmentioning

confidence: 99%

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Sriramadasu,

Hsin

2024

Jpn. J. Appl. Phys.

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This study proposes a new gate architecture that integrates both a p-GaN gate and a Metal-Insulator-Semiconductor (MIS) structure for a normally-off AlGaN/GaN High Electron Mobility Transistor. Silvaco TCAD simulation software is used to assess the performance of the proposed design. A comprehensive analysis of the device's transfer, output, and breakdown characteristics is carried out and compared with the conventional p-GaN gate AlGaN/GaN HEMT. The findings indicate that incorporating MIS in conjunction with the p-GaN gate leads to an augmentation in the on-state current density and a reduction in on-resistance. The proposed HEMT exhibits superior attributes, with an 80% increase in drain current compared to the conventional p-GaN gate HEMT, but remains similar to threshold voltage and breakdown voltage. Consequently, the proposed HEMT demonstrates elevated current density and enhances gate control over the channel without modifying the threshold voltage compared to the conventional p-GaN gate HEMT.

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“…Converting Dmode to E-mode HEMTs is also desirable for the development of monolithic integrated functional circuits [4][5][6][7][8]. For conventional GaN-based HEMTs, various methods have been implemented to achieve Emode operation, including fluoride-based plasma treatment [4], Al x Ga 1-x N back barrier [9], different gate metallization [10], recessed gate [11] and p-type gate [12][13][14]. Nevertheless, when considering In x Al 1-x N/GaN heterostructure, the elevated 2-DEG density(~ 10 13 cm -2 ) arising from spontaneous polarization presents challenges for effective channel depletion.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In_xAl_1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiO_x Gate and Fluorine Treatment

Qin,

Chen,

Xiao

et al. 2024

IEEE J. Electron Devices Soc.

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in this study, we report a novel approach for achieving high-performance enhancement mode (E-mode) InAlN/GaN MOS HEMTs based on the fluorine treatment and a p-type NiOx gate (F-NiO HEMT). The NiO film was deposited at different substrate temperatures using reactive sputtering in a varied mixture of O2 and Ar. We show that the threshold voltage ( 𝑉 𝑇𝐻 ) is effectively modulated by comprehensively optimizing fluorine ion implantation and NiO sputtering conditions without requiring gate recess etching. The influence of different NiO deposition conditions on electrical properties and the critical interface of NiOx/InAlN have been investigated in detail. The proposed E-mode F-NiO HEMT exhibits superior on-state characteristics, including more positive 𝑉 𝑇𝐻 , enhanced gate voltage swing, larger transconductance 𝑔 𝑚 and also superior gate control over the channel. The dual C-V and pulsed mode measurements confirm the excellent NiOx/AlInN interface and effective suppression of current collapse. We propose a model to explain the contrasting temperature-dependent coefficients of 𝑉 𝑇𝐻 shifts observed in pure fluorine ion-implanted and NiO-based devices. The underlying mechanisms at elevated temperatures are also analyzed.

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Cited by 9 publications

References 28 publications

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In_xAl_1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiO_x Gate and Fluorine Treatment

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Cited by 9 publications

References 28 publications

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

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Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In_xAl_1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiO_x Gate and Fluorine Treatment