High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures

Interfacial chemical bond and internal electric field modulated Z-scheme Sv-ZnIn2S4/MoSe2 photocatalyst for efficient hydrogen evolution

“…For the Raman spectra of S v -ZIS, the peaks located at 244.8 and 348.9 cm −1 can be severally assigned to the F 2g and A 1g modes of ZnIn 2 S 4 . Furtherly, as for the S v -ZIS/MoSe 2 (the red line), in addition to the E 1g mode of 2H-MoSe 2 , and the F 2g and A 1g modes of ZnIn 2 S 4 , a new emerging peak situated at about 404.9 cm −1 can be indexed to the Mo-S bonding state 33 , suggesting that the S v -ZIS and MoSe 2 were combined intimately by Mo-S bond. Additionally, it can be observed that all the peaks in S v -ZIS/ MoSe 2 exhibited evidently blue-shift compared to that in S v -ZIS, further revealing the intense chemical coupling effect between the S v -ZIS and MoSe 2 34 .…”

Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2

“…It should be noted that the observed rise and decay times of the MoTe 2 /PdSe 2 vdWH FET are one order of magnitude faster than those of other TMD‐based heterostructure devices reported previously. [ 11,23a,37 ]…”

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

“…Moreover, the response/recovery time of the MoS 2(1− x ) Se 2 x photodetector is as short as 51 ms/51 ms. On the whole, these values also outperform those of pristine MoS 2 ( R ≈ 7.5 mA W −1 , τ rise / τ decay ≈ 50 ms/50 ms), [ 291 ] MoSe 2 ( R ≈ 13 mA W −1 , τ rise / τ decay ≈ 60 ms/60 ms) [ 292 ] photodetectors, the mosaic MoS 2 /MoSe 2 heterojunction photodetector ( R ≈ 1.3 A W −1 , D * ≈ 2.6 × 10 11 Jones, τ rise / τ decay ≈ 0.6 s/0.5 s) [ 293 ] and comparable to those of the in‐situ fabricated vertical MoS 2 /MoSe 2 heterojunction photodetector ( R ≈ 36 A W −1 , D * ≈ 4.8 × 10 11 Jones, τ rise / τ decay ≈ 1.5 ms/3.5 ms). [ 294 ] In general, these experimental findings have established that the composition gradient provides an additional degree of freedom to tailor the photoresponse of 2DLMs‐based photodetectors, without structure abruption as in the case of heterojunctions. Such strategy can ameliorate the photosensitivity of 2DLM photodetectors whilst circumventing the complicated device structures such as the split‐gate configuration as well as the labor‐intensive device fabrication process.…”