High‐Performance Organic Field‐Effect Transistors

Braga, Daniele; Horowitz, Gilles

doi:10.1002/adma.200802733

Cited by 678 publications

(563 citation statements)

References 115 publications

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“…Three transistors of each type were tested. The field-effect mobility, threshold voltage and on/off ratio, are given as averaged values on eight measurements on the same transistor, as extracted from the transfer characteristics [18] in the saturation regime. Fig.1 shows the structure of the PL-OFET along with the P3HT and the phosphatidylcholine PL molecular structures.…”

Section: Electrical Measurementsmentioning

confidence: 99%

Phospholipid film in electrolyte-gated organic field-effect transistors

Cotrone

Ambrico

Toss

et al. 2012

Organic Electronics

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A totally innovative electrolyte-gated field effect transistor, embedding a phospholipid film at the interface between the organic semiconductor and the gating solution, is described. The electronic properties of OFETs including a phospholipid film are studied in both pure water and in an electrolyte solution and compared to those of an OFET with the organic semiconductor directly in contact with the gating solution. In addition, to investigate the role of the lipid layers in the charge polarization process and quantify the field-effect mobility, impedance spectroscopy was employed. The results indicate that the integration of the biological film minimizes the penetration of ions into the organic semiconductor thus leading to a capacitive operational mode as opposed to an electrochemical one. The OFETs operate at low voltages with a field-effect mobility in the 10 -3 cm 2 V -1 s -1 range and an on/off current ratio of 10 3 . This achievement opens perspectives to the development of FET biosensors potentially capable to operate in direct contact with physiological fluids.2

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Section: Electrical Measurementsmentioning

confidence: 99%

Phospholipid film in electrolyte-gated organic field-effect transistors

Cotrone

Ambrico

Toss

et al. 2012

Organic Electronics

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“…1 However, very few studies have directly imaged this behavior using IR spectroscopy 56 , and to our knowledge such spatiospectral mapping has never been demonstrated for an ambipolar organic system in the IR range. Since the saturation regime is most often invoked to estimate carrier mobility, a detailed account of the carrier distribution in the conduction channel, as well as the microscopic details provided by the spectroscopic features, is very useful for developing accurate models of OFET transport.…”

Section: Infrared Microscopymentioning

confidence: 98%

“…1 Much effort is devoted to reducing and tuning energy bandgaps between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels in π-conjugated polymers to improve performance. [2][3][4] Specifically, the donor-acceptor (DA) approach to synthesizing polymers has led to a new generation of high-mobility ambipolar systems, a necessary precondition for many transistor, photovoltaic, and light-emitting device applications.…”

Section: Introductionmentioning

confidence: 99%

“…Spectroscopic probes have direct access to microscopic details of the electronic states without interference from extrinsic effects that often complicate electrical measurements of field-effect devices, such as contact resistance. 1,18 The electronic structure of these quasi-1D systems is significantly modified by the presence of additional charges, giving rise to localized states in the forbidden energy gap. The optical transitions to these sub-bandgap states characterize the nature of the mobile charge carriers in organic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

et al. 2014

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A resurgence in the use of the donor-acceptor (DA) approach in synthesizing conjugated polymers has resulted in a family of high-mobility ambipolar systems with exceptionally narrow energy bandgaps below 1 eV. The ability to transport both electrons and holes is critical for device applications such as organic light-emitting diodes (OLEDs) and transistors (OLETs). Infrared spectroscopy offers direct access to the low-energy excitations associated with injected charge carriers. Here we use a diffraction-limited IR microscope to probe the spectroscopic signatures of electron and hole injection in the conduction channel of an organic field-effect transistor (OFET) based on an ambipolar DA polymer polydiketopyrrolopyrrole-benzobisthiadiazole (PDPPBBT). We observe distinct polaronic absorptions for both electrons and holes, and spatially map the carrier distribution from the source to drain electrodes for both unipolar and ambipolar biasing regimes. For ambipolar device configurations, we observe the spatial evolution of hole-induced to electron-induced polaron absorptions throughout the transport path. Our work provides a platform for combined transport and infrared studies of organic semiconductors on micron length scales relevant to functional devices.

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“…There are already many reports of OTFTs having higher carrier mobility than amorphous silicon transistors [7,8]. Almost all of top records of OTFT performance, however, have been achieved with vacuum-deposited films which is not suitable in the viewpoint of the cost issue.…”

Section: Introductionmentioning

confidence: 99%