High‐Performance Organic Field‐Effect Transistors with Low‐Cost Copper Electrodes

Di, Chong‐an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Wang, Ying; Wu, Weiping; Zhu, Daoben

doi:10.1002/adma.200701812

Cited by 92 publications

(57 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The less balanced hole and electron mobilities and possible oxidation to the Cu electrode are likely to be the reasons. 24 Noise margin is another important characteristic of inverters, which describes the range of the valid low/high voltage of the inverter. For an inverter to be operated in a large voltage range, a high noise margin is essential.…”

Section: Resultsmentioning

confidence: 99%

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

et al. 2013

View full text Add to dashboard Cite

We report the fabrication of simply structured and high performance organic complementary inverters based on an ambipolar organic semiconductor, 8,9,10,11-tetrachloro-6,13-bis-(triisopropylsilylethynyl)-1-azapentacene (4Cl-Azapen). Individual transistors using symmetric Au electrodes showed high and balanced performance, with good hole (up to 0.23 cm2V−1s−1) and electron (up to 0.21 cm2V−1s−1) mobilities. Integrated complementary inverters showed sharp inversions with high gains (>180) and negligible hysteresis. The inverters using low-cost electrodes, Ag and Cu, also exhibited high gains and high noise margins (>75% of the ideal value)

show abstract

Section: Resultsmentioning

confidence: 99%

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Organic thin-fi lm transistors (OTFT) have attracted a lot of attention because of their potential applications in soft, [1][2][3] low-cost, [4][5][6] large-area electrical devices [ 7 , 8 ] and low-voltage driving circuits of soft displays. [9][10][11] Currently, the low mobility of OTFTs is the main challenge for the industrial application of organic devices.…”

Section: Doi: 101002/adma201101178mentioning

confidence: 99%

Morphology Optimization for the Fabrication of High Mobility Thin‐Film Transistors

Sun

Zhang

et al. 2011

Advanced Materials

Self Cite

View full text Add to dashboard Cite

“…For example, Cu and Ag source-drain electrodes were chemically modified with 7,7,8,8-tetracyanoquinodimethane (TCNQ), when the formation of Cu-TCNQ and Ag-TCNQ reduced the hole injection barrier and improved electrodes/organic layer contact, which reduced contact resistances. Taking pentacene-based OFETs with Ag-TCNQ modified electrodes as an example, the mobility increased from 0.02 to 0.18 cm 2 V −1 s −1 [53]. Gundlach et al [54] demonstrated induced crystallization of an organic layer by electrode interface modification.…”

Section: Interfaces and Their Modificationmentioning

confidence: 99%

Organic Semiconductors for Field-Effect Transistors

Zhang

2015

Lecture Notes in Chemistry

Self Cite

View full text Add to dashboard Cite

An important application of organic semiconductors is to fabricate organic field-effect transistors (OFETs) which are essential building blocks for the next generation of organic circuits. In terms of molecular size or molecular weight, organic semiconductors can be divided into small-molecule and polymer semiconductors, and thus their corresponding OFETs can also be categorized into organic small molecule OFETs and polymer field-effect transistors (PFETs). On the basis of the main charge carriers transporting in OFET channels, organic semiconductors can be further divided into p-type, n-type, and ambipolar semiconducting materials. According to the characteristic of the organic semiconductors, the OFETs can be classified into two types: organic thin film transistors (OTFTs) and organic single crystal transistors. In any kind of OFET devices, organic semiconductor materials are the core; their properties determine the performance of the electronic devices. Therefore, the design and synthesis of high performance organic semiconductor materials are the basis and premise of the wide application of OFET devices. In the past few decades, great progress has been made in developing organic semiconductors. Besides organic semiconducting materials, there are many other factors influencing the performance of OFETs including device configuration, processing technique, and other devices physical factors, etc. In the following, a brief review of the development of p-type, n-type, ambipolar organic semiconductors and their field-effect properties is given. The history, mechanism, configuration, and fabrication methods of OFET devices and main performance influencing factors of OFETs are also introduced.

show abstract

High‐Performance Organic Field‐Effect Transistors with Low‐Cost Copper Electrodes

Cited by 92 publications

References 29 publications

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

Morphology Optimization for the Fabrication of High Mobility Thin‐Film Transistors

Organic Semiconductors for Field-Effect Transistors

Contact Info

Product

Resources

About