High Performance Organic Thin Film Transistors

Kelley, Tommie W.; Muyres, Dawn V.; Baude, P. F.; Smith, Terry P.; Jones, Todd D.

doi:10.1557/proc-771-l6.5

Cited by 271 publications

(198 citation statements)

References 2 publications

Supporting

Mentioning

188

Contrasting

Unclassified

Order By: Relevance

“…They are widely used as basic synthetic blocks (5,6). The larger tetracene (4) and pentacene (5) are promising organic semiconductors and have been applied as OFETs (7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17) thanks to a low vibrational reorganization energy and therefore a high hole mobility (18). Many of the derivatives of 4 and 5 are good candidates for OLEDs (19)(20)(21)(22).…”

mentioning

confidence: 99%

Nature of ground and electronic excited states of higher acenes

Yang

Davidson

Yang

2016

Proc. Natl. Acad. Sci. U.S.A.

174

208

View full text Add to dashboard Cite

Higher acenes have drawn much attention as promising organic semiconductors with versatile electronic properties. However, the nature of their ground state and electronic excited states is still not fully clear. Their unusual chemical reactivity and instability are the main obstacles for experimental studies, and the potentially prominent diradical character, which might require a multireference description in such large systems, hinders theoretical investigations. Here, we provide a detailed answer with the particleparticle random-phase approximation calculation. The 1 A g ground states of acenes up to decacene are on the closed-shell side of the diradical continuum, whereas the ground state of undecacene and dodecacene tilts more to the open-shell side with a growing polyradical character. The ground state of all acenes has covalent nature with respect to both short and long axes. The lowest triplet state 3 B 2u is always above the singlet ground state even though the energy gap could be vanishingly small in the polyacene limit. The bright singlet excited state 1 B 2u is a zwitterionic state to the short axis. The excited 1 A g state gradually switches from a doubleexcitation state to another zwitterionic state to the short axis, but always keeps its covalent nature to the long axis. An energy crossing between the 1 B 2u and excited 1 A g states happens between hexacene and heptacene. Further energetic consideration suggests that higher acenes are likely to undergo singlet fission with a low photovoltaic efficiency; however, the efficiency might be improved if a singlet fission into multiple triplets could be achieved.higher acenes | diradical | double excitation | particle-particle random-phase approximation | charge-transfer excitation

show abstract

mentioning

confidence: 99%

Nature of ground and electronic excited states of higher acenes

Yang

Davidson

Yang

2016

Proc. Natl. Acad. Sci. U.S.A.

174

208

View full text Add to dashboard Cite

show abstract

“…Compound 1 [42] 0.01 10 3 P5 [21] 5.00 -Compound 2 [43] 1.5 10 7 P5 [23] 1.57 -DS-4T [46] 0.10 10 3 P5-Precursor [26] 0. 2 10 5 CuPc [50] 1.00 10 4 P5-Precursor [27] 0.068 10 5 ZnPc [52] 0.32 -Rubrene (PMMA) [29] 1.5～2.0 1.2～20 PtOET [54] 10 -6 ～10 -4 10 2 ～10…”

Section: Figure 2 Schematic Of P-and N-channel Thin-film Transistors mentioning

confidence: 99%

“…并五苯容易获得且是目前空穴迁移率最高的几种半导体材料之一. Lin 等 [21] . Koo 小组红荧烯(Rubrene), 即 5,6,l1,12-四苯基并四苯, 其单晶结构及堆积行为见图 4 [28] .…”

Section: Figure 2 Schematic Of P-and N-channel Thin-film Transistors unclassified

Recent Progress of Semiconductors in Organic Thin-Film Transistors

Ma¹,

Wang²,

Guo³

et al. 2012

Chin. J. Org. Chem.

View full text Add to dashboard Cite

“…[1][2][3][4][5][6][7][8] Among the various molecular materials being studied, pentacene (C 22 H 14 ) 1,2,6,7 is a very promising candidate for future devices since a charge carrier mobility at room temperature of up to 35 cm 2 V À1 s…”

Section: Introductionmentioning

confidence: 99%

Formation of intra-island grain boundaries in pentacene monolayers

Zhang

Duhm

et al. 2011

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O 3 treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O 3 -treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island-and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.

show abstract

High Performance Organic Thin Film Transistors

Cited by 271 publications

References 2 publications

Nature of ground and electronic excited states of higher acenes

Nature of ground and electronic excited states of higher acenes

Recent Progress of Semiconductors in Organic Thin-Film Transistors

Formation of intra-island grain boundaries in pentacene monolayers

Contact Info

Product

Resources

About