High-performance p-type transparent conducting CuI–Cu<sub>2</sub>O thin films with enhanced hole mobility, surface, and stability

Xue, Ruibin; Gao, Gang; Yang, Lei; Xu, Liangge; Zhang, Yumin; Zhu, Jiaqi

doi:10.1039/d3tc02422a

J. Mater. Chem. C

2023

DOI: 10.1039/d3tc02422a

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High-performance p-type transparent conducting CuI–Cu₂O thin films with enhanced hole mobility, surface, and stability

Ruibin Xue,

Gang Gao,

Lei Yang

et al.

Abstract: Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the...

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2024

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Cited by 4 publications

References 70 publications

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Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

Xue,

Gao,

Yang

et al. 2024

Journal of Alloys and Compounds

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Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

Xue,

Gao,

Yang

et al. 2024

Journal of Alloys and Compounds

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The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Xue,

Gao,

Yang

et al. 2024

RSC Adv.

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Oxygen incorporation effects on the structural and thermoelectric properties of copper(I) iodide

Markwitz,

Malone,

Back

et al. 2024

Journal of Applied Physics

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Oxygen is a ubiquitous contaminant in thin films grown in high vacuum systems, and it was hypothesized to play an important role in the properties of the p-type conductivity of transparent copper(I) iodide, CuI. We study the ambient properties of CuI deposited at various partial pressures of oxygen gas. Through a variety of experimental techniques, we find that achieving a critical oxygen partial pressure of below p(O2) = 3×10−5 mbar is essential for depositing stoichiometric and conductive CuI thin films. Notably, we relate the commonly reported copper excess to the presence of oxygen within the CuI films. Notably, we relate the commonly reported excess of copper in CuI thin films to to the presence of oxygen. Finally, we infer from transport and optical measurements that the hole transporting properties of sputtered CuI films are dominated by an abundance of VCu defects with an acceptor transition energy of 84±3 meV rather than OI defects with an acceptor transition energy of 175±14 meV.

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High-performance p-type transparent conducting CuI–Cu₂O thin films with enhanced hole mobility, surface, and stability

Abstract: Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the...

Cited by 4 publications

References 70 publications

Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Oxygen incorporation effects on the structural and thermoelectric properties of copper(I) iodide

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High-performance p-type transparent conducting CuI–Cu2O thin films with enhanced hole mobility, surface, and stability

Abstract: Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the...

Cited by 4 publications

References 70 publications

Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Oxygen incorporation effects on the structural and thermoelectric properties of copper(I) iodide

Contact Info

Product

Resources

About

High-performance p-type transparent conducting CuI–Cu₂O thin films with enhanced hole mobility, surface, and stability