High-Performance Photodetector Based on the ReSe₂/PtSe₂ van der Waals Heterojunction

Abstract

In recent years, heterojunction photodetectors constructed of two-dimensional materials with no overhanging bonds and lattice mismatches have attracted wide attention due to the advantages of integrating different materials. Here, we report a high-performance photodetector with tunable dual auroral responses based on the semiconductor (ReSe2) and semimetal (PtSe2) heterojunctions, with a high reverse commutation ratio of 6.2 × 104 at room temperature. Under visible light irradiation, the photodetector, with an open circuit voltage of 0.2 V and a short circuit current of 19 pA, and a high on/off ratio of 5.5 × 104, exhibits a clear photovoltaic effect. At the same time, the photodetector shows a photoelectric responsivity and detectivity of 153 mA/W and 7.72 × 1011 Jones, respectively. The photodetector also shows a large wideband optical detection capability between ultraviolet and near-infrared light. Our work provides a model to develop future electronic and optoelectronic multifunctional devices based on a 2D semiconductor and a semimetal van der Waals heterojunction.

Highly Responsive and Self-Powered Photodetector Based on PtSe2/MoS2 Heterostructure

“…The saturation of the photocurrent leads to the lower value of the power law index α because of this. An analogous α variation trend was previously observed in other photodetectors based on 2D heterostructures [31]. As a new type of the state-of-art photodetection device, self-powered photodetectors have begun to receive more and more attention [32].…”

“…The saturation of the photocurrent leads to the lower value of the power law index α because of this. An analogous α variation trend was previously observed in other photodetectors based on 2D heterostructures [31]. To assess the optoelectronic properties of the PtSe2/MoS2 device, further characterization was implemented under the illumination of different wavelengths (405 nm, 700 nm and 980 nm).…”

Photodetectors Based on ZrS3/MoS2 Heterostructures

“…The Δ V SPD is defined as the difference between the KPFM tips and the work function of the material φ m by Δ V spd = φ tip – φ m . Thus, the Fermi-level difference (Δ E f ) between MoS 2 and ZrS 3 can be obtained by normalΔ E f = normalΔ V spd − ZrS 3 − normalΔ V spd − MoS 2 …”

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

“…[167] Vertical van der Waals heterostructures combined with ambipolar 2D semiconductors allow for the integration of highly disparate materials with crystal lattice mismatching. [168] They have been employed in the construction of high-performance electronic and optoelectronic devices, such as ReSe 2 /MoS 2 van der Waals heterostructures, which exhibit ultra-fast and linear polarization-sensitive photodetectors, [169] vertical MoS 2 /WS 2 heterostructure with ambipolarity behavior, [170] vertical graphene/WS 2 /graphene van der Waals heterostructure with a low off-state current and a high ON/OFF ratio, exhibiting both n-type and bipolartype conduction, [171] ReSe 2 /PtSe 2 heterojunction for highperformance photodetectors, [172] WSe 2 /InSe heterostructure photodetector with ambipolar photoresponsivity, [173] and ambipolar SnO/SnS heterojunction transistors employed to build CMOS inverters. [174] Such investigations indicate that vertical heterostructures hold great potential for use in reconfigurable devices towards high-performance integrated circuits and systems.…”