Oxygen vacancy engineering is effective for improving
the photoelectrochemical (PEC) performance of electrodes. However,
such a protocol has not yet shown impressive success for ZnO photoanodes
due to the unstable nature of ZnO under a reducing atmosphere. In
this work, an electrochemical method is explored to create oxygen
vacancies in ZnO with a controllable concentration. Unlike the successful
example of other materials with chemical treatment, such a mild electrochemical
method seems unable to evidently extend the working spectrum of ZnO
by generating isolated trap states or upshifting the conduction band
edge, but it dramatically improves the light absorption in the UV
region. Importantly, we find that the created oxygen vacancies act
as water oxidation intermediate species facilitating charge transfer
rather than recombination sites. The origin of this merit is explained
by the lowered overpotential for water oxidation on the ZnO surface.
Moreover, it is also found that a balance among the density of oxygen
vacancy, charge separation, and charge transfer is required to maximize
the efficiency of ZnO by giving enough surface reactive sites and
efficient bulk charge separation. The optimized ZnO achieves a photocurrent
density of 1.2 mA cm–2 at 1.23 V vs reversible hydrogen
electrode, 3.0 times greater than that of the pristine sample (0.4
mA cm–2). Without doubt, the electrochemical treatment
affords a new avenue for enhancing the PEC performance of ZnO and
may hold huge potential applications in other semiconductors for large-scale
manufacturing.