2016
DOI: 10.1021/acsami.6b01254
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High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Abstract: Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilit… Show more

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Cited by 34 publications
(34 citation statements)
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References 74 publications
(114 reference statements)
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“…According to previous reports and our results [Fig. S1], we attribute the good device stability to the molecular design of PTCDI–C 13 H 27 and hydrophobic nature for the decreased trap density in PMMA dielectric 22,31 . These properties can offer the basic for further study on photoelectric properties.
Figure 2Electrical properties of the PTCDI-C 13 H 27 thin-film transistor: ( a , b ) Typical transfer and output curves of the device.
…”
Section: Resultssupporting
confidence: 87%
“…According to previous reports and our results [Fig. S1], we attribute the good device stability to the molecular design of PTCDI–C 13 H 27 and hydrophobic nature for the decreased trap density in PMMA dielectric 22,31 . These properties can offer the basic for further study on photoelectric properties.
Figure 2Electrical properties of the PTCDI-C 13 H 27 thin-film transistor: ( a , b ) Typical transfer and output curves of the device.
…”
Section: Resultssupporting
confidence: 87%
“…Photoresponsivity is a device parameter typically defined as the photoresponse divided by the incident laser intensity on the transistor channel (Photoresponsivity = Photoresponse/ (P*WL)). For the blue laser diode values of 3.7 × 10 6 (%W −1 ) and 1 × 10 6 (%W −1 ), in the OFF V G = 0.2 V and ON-state at V G = −0.2 V, respectively, were measured and are lower than reported literature values, [45] but it is the first time that tunable photoresponse of a polymer field-effect transistor has been reported for bias voltages lower than 1 V.…”
Section: Low-voltage Transistors For Sensorscontrasting
confidence: 70%
“…[45] The fast response upon illumination suggests photogenerated charge carriers inside the semiconductor rather than slower thermal processes and has been observed in other organic semiconductors. [42,46] While driving the FET at different gate bias voltages, two operation regions can be identified.…”
Section: Low-voltage Transistors For Sensorsmentioning
confidence: 89%
“…More importantly, some OSCs with suitable optical band-gaps can be fabricated into phototransistors for light detection ranging from ultraviolet (UV) to near infrared (NIR). It is therefore essential to study OSCbased phototransistors [2,[18][19][20][21][22][23]. Developing the OSCs films with nano/micro-structures has attracted interest over the recent years, which is effective to improve the performances of the OPTs [24,25].…”
Section: Introductionmentioning
confidence: 99%