High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Abstract

III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.

Engineering Semi‐Reversed Quantum Well Photocatalysts for Highly‐Efficient Solar‐to‐Fuels Conversion

“…The development of special heterojunction systems consisting of quantum‐sized semiconductor components, namely quantum wells (QWs), has been widely investigated in the field of light‐emitting devices, due to their superior electron transfer and confinement properties. [ 11 ] In general, the simple single‐layer QW possesses an A‐B‐A sandwich‐type layer structure, in which the conduction band (CB) and the valence band (VB) positions of the semiconductor at the two A layers should straddle those of the semiconductor at the middle B layer (Scheme 1c). [ 12 ] From the energy band structure standpoint, the semiconductors at the A and B layers can be referred to as the barrier and well materials, respectively.…”