High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

Liu, Sheng-Hsien; Yang, Wen−Luh; Wu, Chi-Chang; Chao, Tien−Sheng; Ye, Meng-Ru; Su, Y K; Wang, Po-Yang; Tsai, Ming-Jui

doi:10.1109/led.2012.2224633

Cited by 29 publications

(10 citation statements)

References 14 publications

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“…The fluctuation in the Lu 3 N@C 80 NW was approximately one-tenth of that in a C 60 NW. To the best of our knowledge, this stable resistive switch operation at RT is the most stable and repeatable result reported for a polymeric memory device . In addition, when compared with our experimental results related to a metallic nanogap switch, − the observed fluctuation in the Lu 3 N@C 80 NW is smaller.…”

Section: Resultssupporting

confidence: 70%

Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Umeta

Suga

Takeuchi

et al. 2021

ACS Appl. Nano Mater.

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Fullerenes are spherical clusters composed entirely of carbon atoms with an inner space that can accommodate atoms or small molecules; when the inner space is occupied, the resultant materials are known as endohedral fullerenes. Because the caged component of endohedral fullerenes can modify the electronic state of the carbon cage, endohedral fullerenes can function as a designed tiny electronic unit. Some endohedral fullerenes have excess electrons on the carbon cage, and these electrons function as a charge source for electrical conduction. In addition, endohedral fullerenes exhibit enhanced chemical reactivity. In the endohedral fullerene Lu 3 N@C 80 , a charge transfer of six electrons occurs between the endohedral fullerene Lu 3 N and the C 80 cage. To investigate their electrical conduction, we synthesized Lu 3 N@C 80 nanowires (NWs) at a liquid−liquid interface and characterized them without subjecting them to the conduction preset associated with polymerization induced by irradiation with an electron beam or ultraviolet light. When current−voltage measurements were performed in a two-terminal configuration, the current increased with increasing voltage applied to the NW and then decreased after reaching the current maximum. This change in current is known as negative differential resistance (NDR). When a two-terminal voltage was applied to the NW with the observed NDR, the NW resistance showed switching behavior between a high-resistance state for the off state and a low-resistance state for the on state. Such resistive switching is expected as one of the elements of nanoelectronics. In particular, the two-terminal devices potentially realize single-fullerene motion resistive switching and nonvolatile memory. The temperature dependence of the on/off current ratio of the switching characteristic tended to increase with increasing measurement temperature as a consequence of fullerene coupling and the switching behavior induced by the applied current. These experimental analyses suggested that a stable Lu 3 N@C 80 NW switching repetition could be explained as changing the position motion and bonding configuration of a key Lu 3 N@C 80 bridging the conductive fullerene path.

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Section: Resultssupporting

confidence: 70%

Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Umeta

Suga

Takeuchi

et al. 2021

ACS Appl. Nano Mater.

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“…Most recently, Tsai et al reported a new polyimide derivative ( P47 , Scheme ) containing electron‐donor and electron‐acceptor, which exhibited nonvolatile memory effect . The polymer P47 exhibits an asymmetric bipolar switching behavior with a high ON/OFF current ratio of >10 5 .…”

Section: Functional Polymers For Non‐volatile Memory Devicesmentioning

confidence: 99%

Polymer‐Based Resistive Memory Materials and Devices

et al. 2013

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Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.

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“…However, flash memory suffers from physical limitations in its fabrication process and reliability problems [ 2 , 3 ]. Therefore, next-generation memories such as magnetoresistive random access memory (MRAM) [ 4 ], ferroelectric random access memory (FeRAM) [ 5 ], phase–change random access memory (PCRAM) [ 6 ], and resistive random access memory (ReRAM) [ 7 , 8 ], are being widely developed to replace flash memory devices. Among these memory types, ReRAM is the most promising NVM [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

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High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

Cited by 29 publications

References 14 publications

Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Polymer‐Based Resistive Memory Materials and Devices

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

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High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

Cited by 29 publications

References 14 publications

Stable Resistance Switching in Lu3N@C80 Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Stable Resistance Switching in Lu3N@C80 Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Polymer‐Based Resistive Memory Materials and Devices

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

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Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching

Stable Resistance Switching in Lu₃N@C₈₀ Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching