High performance polysilicon nanowire NEMS for CMOS embedded nanosensors

Ouerghi, Issam; Philippe, J.; Duraffourg, Laurent; Laurent, Ludovic; Testini, A.; Benedetto, K.; Charvet, Anne-Marie; Delaye, V.; Masarotto, L.; Scheiblin, P.; Reita, C.; Yckache, K.; Ladner, Carine; Ludurczak, Willy; Ernst, T.

doi:10.1109/iedm.2014.7047101

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…Finally extracted GFs were equal to 14 and 44 for respectively polyB and c-Si at 2×10 20 cm -3 (24 and 53 at 5×10 19 cm -3 ). The GF is lower than this observed in LPCVD poly-Si (1,16), due to the low effective grain size. …”

Section: Mass Sensing Performancecontrasting

confidence: 63%

Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

Ouerghi

Sansa

Ludurczak

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

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In this work, we demonstrate for the first time the performance of polysilicon (poly-Si) NEMS fabricated with a low temperature process compatible with a NEMS above IC 3D integration. Most important figures of merit feature values still competitive in comparison to mono-crystalline (c-Si) NEMS: Allan deviation, quality factor (Q), Signal-to-Background ratio (SBR), Dynamic Range (DR), yield and variability, piezoresistive and elastic properties. We found the best process window (laser annealing conditions and dopant concentration) to optimize poly-Si NEMS with excellent features compared to conventional c-Si NEMS. The goal of this study is to replace c-Si for low cost 3D integration.

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Section: Mass Sensing Performancecontrasting

confidence: 63%

Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

Ouerghi

Sansa

Ludurczak

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

Self Cite

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“…MtM includes innovative functionalities, in addition to logic and memory, such as RF communication [23], sensing [24], energy harvesting and management, power devices, flexible electronics. Complex embedded software needs also to be integrated into SoCs and SiPs to optimize performance scaling.…”

Section: More Than Moore and Packaging Integrationmentioning

confidence: 99%

Roadmapping of Nanoelectronics for the New Electronics Industry

Gargini

Hayashi

2021

Applied Sciences

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This paper is dedicated to a review of the international effort to map the future of nanoelectronics from materials to systems for the new electronics industry. The following sections are highlighted: the Roadmap structure with the international teams, the methodology and historical evolution, the various eras of scaling, the new ecosystems and computer industry, the evolving supply chain, the development of SoC and SiP, the advent of the Internet of Everything and the 5G communications, the dramatic increase of data centers, the power challenge, the technology fusion, heterogeneous and system integration, the emerging technologies, devices and computing architectures, and the main challenges for future applications.

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“…Higher the doping difference between b and g. High resistivity at low to the depletion zone which can be as large as the emphasizes the preponderance of g or b in t concentration. [9]. It allo GF locally at the nanoscale and calibrated with electromechani electrical measurement of NW beam.…”

Section: Modelmentioning

confidence: 99%

“…This is opposite to Si where GF decreases versus ht be an opportunity to fabricate y-Si NEMS while conserving a perimentally demonstrated [9], a rable signal to background ratio stability. In this paper we have and localized the best process GF at high doping level.…”

Section: Introductionmentioning

confidence: 96%

Piezoresistive transduction optimization of p-doped poly-Silicon NEMS

Ouerghi

Ludurczak

Duraffourg

et al. 2015

2015 45th European Solid State Device Research Conference (ESSDERC)

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This paper presents a thorough i longitudinal gauge factor (GF) at high doping polycrystalline-Silicon (poly-Si) nanowire (NW is shown that a high GF (more than 30) can concentration about 10 20 cm -3 . This result is v high volume, low fabrication cost NEMS devic due to the specific piezoresistive behavior compared to c-Si. We modeled the mechanica poly-Si and compared them to electrical meas to predict the optimum dopant concentration experimental extraction of the GF has been p on NWs gauge thanks to a new non-destructive in [1].

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High performance polysilicon nanowire NEMS for CMOS embedded nanosensors

Cited by 9 publications

References 14 publications

Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

Roadmapping of Nanoelectronics for the New Electronics Industry

Piezoresistive transduction optimization of p-doped poly-Silicon NEMS

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