High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate

Jacob, S.; Abdinia, Sahel; Benwadih, M.; Bablet, J.; Chartier, Isabelle; Gwoziecki, R.; Cantatore, Eugenio; Roermund, van Ahm Arthur; Maddiona, Lidia; Tramontana, F.; Maiellaro, G.; Mariucci, L.; Rapisarda, M.; Palmisano, G.; Coppard, R.

doi:10.1016/j.sse.2013.02.022

Cited by 75 publications

(47 citation statements)

References 9 publications

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“…Their work was originally based on a PTAA derivative and an acene-based diimide as p-and n-channel semiconductors, both deposited from solution by screen printing on a plastic substrate [127], [138]. Subsequently, this technology was improved by substituting PTAA with much higher-mobility TIPSpentacene, thus achieving a more balanced performance of the complementary semiconductor pair [110], [139]. The robustness of this technology enabled high-performance complementary amplifiers, as can be found in the work of Guerin et al [127], Maiellaro et al [7], [124] and Abdinia et al [125].…”

Section: Semiconductorsmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.

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Section: Semiconductorsmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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“…The adopted printed complementary organic technology is manufactured on an 11 × 11 cm 2 flexible foil by CEA-Liten [10], [11]. The TFTs are implemented in a top-gate bottom-contact multi-finger structure with a 20-µm channel length on 125-µm thick polyethylene-naphtalate (PEN) substrate.…”

Section: A Complementary Organic Tft Technologymentioning

confidence: 99%

“…In recent years, a printed complementary organic TFT (C-OTFT) technology has been developed [10], [11] and successfully employed to design digital and analog circuits [12], [13], a 4-bit analog-to-digital converter [14] and a light sensor [4]. This technology has been recently used to explore the feasibility of a RFID tag with active envelope detection, making possible to demodulate ASK PWM-coded signals with modulation depth (h) as low as 25% [15].…”

Section: Introductionmentioning

confidence: 99%

An Integrated 13.56-MHz RFID Tag in a Printed Organic Complementary TFT Technology on Flexible Substrate

Fiore

Battiato

Abdinia

et al. 2015

IEEE Trans. Circuits Syst. I

130

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An integrated 13.56-MHz RFID tag in a printed organic complementary TFT technology on flexible substrateFiore, V.; Battiato, P.; Abdinia, S.; Jacobs, S.; Chartier, I.; Coppard, R.; Klink, G.; Cantatore, E.; Ragonese, E.; Palmisano, G. Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Fiore, V., Battiato, P., Abdinia, S., Jacobs, S., Chartier, I., Coppard, R., ... Palmisano, G. (2015). An integrated 13.56-MHz RFID tag in a printed organic complementary TFT technology on flexible substrate. IEEE Transactions on Circuits and Systems I: Regular Papers, 62(6), 1668-1677. [7108060]. DOI: 10.1109/TCSI.2015 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Download date: 12. May. 2018 TCAS-I 1611Abstract-This paper presents the first printed organic 13-MHz RFID on flexible substrate. The proposed solution includes a planar near field antenna bonded to an RFID tag, which is printed on flexible foil using an organic complementary TFT technology. Thanks to an active envelope detector, ASK modulation with modulation depth as low as 20% can be adopted to increase the available input power for the rectifier. The RFID functionality is demonstrated at the internally generated supply voltage of 24 V, for a reading range of 2-5 cm and a bit-rate up to 50 bit/s. With more than 250 transistors on the same foil, this work represents the most complex circuit ever published in a printed organic complementary TFT technology.Index Terms-ASK modulation, active detection, mixed analog-digital circuits modulation index, organic circuits, pentacene, polyimide, radio frequency identification, sub...

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“…[ 21 ] To evaluate the dynamic response of CMOS circuits consisting of p-type and n-type OFETs, we designed and fabricated fi ve-stage ring oscillators. [ 23 ] For the application of organic transistors to low-cost RFID tags, the high-speed organic rectifi er is a crucial device that supplies DC voltage to the logic circuits in the tags. We designed p-type C 10 -DNBDT transistors with L / W = 20/280 µm and n-type GSID104031-1 transistors with L / W = 5/2100 µm to compensate for the differences in mobility between C 10 -DNBDT and GSID104031-1 semiconductors.…”

Section: Doi: 101002/aelm201500178mentioning

confidence: 99%

Short‐Channel Solution‐Processed Organic Semiconductor Transistors and their Application in High‐Speed Organic Complementary Circuits and Organic Rectifiers

Uno

Kanaoka

Cha

et al. 2015

Adv Elect Materials

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the other hand, it was recently reported by our group that inchsize single-crystalline fi lms with unprecedentedly high carrier mobility can be fabricated from solution using a simple "edgecasting" method. [11][12][13] In this study, we aim to link the highmobility of solution-processed organic crystalline fi lms to a high dynamic response in organic transistors for both p-type and n-type operation by micropatterning the crystalline semiconductors and source/drain electrodes. The cut-off frequency f c of a transistor in the linear regime is described aswhere V D is the applied drain voltage, and L and W are the channel length and width, respectively. µ eff is the effective carrier mobility of an organic semiconductor, including the effects of contact resistance, C para is the parasitic gate capacitance, and c i WL represents the channel capacitance. In the saturation regime, V D is replaced by the gate voltage V G . From Equation ( 1) , it is clear that short-channel high-mobility transistors are strongly important to raise up the maximum operational speed of organic transistors. To realize a high fi eld-effect mobility in a short-channel device, it is crucial to reduce the contact resistance between the organic materials and the contact electrodes, which has been a challenging issue in organic transistors. In this Communication, top-contact organic confi gurations were adopted to realize extremely low contact resistances of 123 Ω cm for p-type transistors and 1.2 kΩ cm for n-type transistors, in which the contact electrodes were fabricated using photolithography process on solution-processed organic semiconductors. Complementary ring oscillators consisting of p-type and n-type transistors were demonstrated in ambient conditions to examine the operational speed of the organic circuits. Moreover, organic rectifi ers based on high-speed p-type transistors in which the drain and gate electrodes were diodeconnected were examined to determine their dynamic response speed in rectifying AC signals to DC output voltages at frequencies above 22 MHz. In the design of logic circuits, complementary circuits have the advantage of low power consumption, so the mainstream advancement of silicon technology has been based on complementary metal-oxide-semiconductor (CMOS) circuits. In organic transistors, stable n-type operation in ambient conditions has been a crucial issue because of the unstable Organic complementary circuits based on organic semiconductors have been proposed to enable attractive devices such as fl exible, or wearable organic devices. [1][2][3][4][5] Radio-frequency identifi cation (RFID) tags are one prospective application because organic devices are low-cost, light-weight, and fl exible, which are attractive features for this application. [6][7][8] One of the most important features of organic semiconductor materials is the strong self-aggregation of molecules, which enables fi ne crystalline fi lms to be easily formed, even at room temperature. This strong self-aggregation of organic materials also enables ...

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High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate

Cited by 75 publications

References 9 publications

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

An Integrated 13.56-MHz RFID Tag in a Printed Organic Complementary TFT Technology on Flexible Substrate

Short‐Channel Solution‐Processed Organic Semiconductor Transistors and their Application in High‐Speed Organic Complementary Circuits and Organic Rectifiers

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