High performance printed oxide field-effect transistors processed using photonic curing

Garlapati, Suresh Kumar; Marques, Gabriel Cadilha; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Tahoori, Mehdi B.; Aghassi‐Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

doi:10.1088/1361-6528/aab7a2

Cited by 24 publications

(15 citation statements)

References 33 publications

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“…For cooling, the substrate is kept in the box furnace over night. It should be mentioned, that other possibilities for channel formation can be utilized, such as photonic or chemical curing, to lower processing temperature 68,69 .…”

Section: Discussionmentioning

confidence: 99%

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

et al. 2020

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Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

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Section: Discussionmentioning

confidence: 99%

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

et al. 2020

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“…In the past, it has been shown that these EGFETs perform reliably over a wide temperature range. [45][46][47] Indeed, EGFETs processed at room temperatures show lower field-effect mobility values compared to EGFETs with thermally annealed indium oxide channel. [16,[41][42][43] To achieve high performance EGFETs, the indium oxide films need to be annealed at temperatures around 400 °C.…”

Section: Electrolyte-gated Field-effect Transistors Based On Indium Omentioning

confidence: 99%

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”

et al. 2019

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Printed electrolyte‐gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low‐voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n‐type electrolyte‐gated field‐effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low‐power printed electronics applications.

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“…The nanoparticle method uses low‐temperature processing techniques; however, the method is limited by low reliability and nonuniform dispersion over large areas. The nanoparticle‐based channel TFT, in particular, shows considerably low stability due to poor channel/gate dielectric interface roughness, created by the voids between nanoparticles …”

Section: Fundamentals Of the Solution Processing Technique For Oxide mentioning

confidence: 99%

“…Research has been actively conducted to form solution‐processed oxide semiconductors at low‐temperatures using laser irradiation processes . Photoactivation with a laser enables selective processing of localized areas, delivering energy quickly and accurately.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

319

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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High performance printed oxide field-effect transistors processed using photonic curing

Cited by 24 publications

References 33 publications

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

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