2016
DOI: 10.1063/1.4967190
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High-performance rectifiers fabricated on a flexible substrate

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Cited by 12 publications
(5 citation statements)
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“…Traditional micro- and nanofabrication techniques are designed to pattern on rigid substrates, such as silicon wafers. Patterning micro- and nanostructures on unconventional substrates, such as soft and flexible materials (e.g., polydimethylsiloxane (PDMS)) and curved substrates [ 11 , 12 ], emerged in recent years because of applications in wearable electronics [ 13 ], implantable medical devices [ 14 ], and disposable sensors [ 15 ]. Also, as the required resolution reaches down to a nanometer scale, traditional patterning techniques such as EBL are slow and expensive to pattern in a large area.…”
Section: Introductionmentioning
confidence: 99%
“…Traditional micro- and nanofabrication techniques are designed to pattern on rigid substrates, such as silicon wafers. Patterning micro- and nanostructures on unconventional substrates, such as soft and flexible materials (e.g., polydimethylsiloxane (PDMS)) and curved substrates [ 11 , 12 ], emerged in recent years because of applications in wearable electronics [ 13 ], implantable medical devices [ 14 ], and disposable sensors [ 15 ]. Also, as the required resolution reaches down to a nanometer scale, traditional patterning techniques such as EBL are slow and expensive to pattern in a large area.…”
Section: Introductionmentioning
confidence: 99%
“…etal-insulator-metal (MIM) and metal-insulator-insulator-metal (MIIM) tunnel diodes have attracted much attention from the perspective of devices having the potential to be used as a square-low detector for high-frequency rectifying systems, such as energy harvesting applications. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Important performance indexes for the harvesting application are the effective current responsivity (β eff ) under a high-frequency condition and the junction resistance (R D ) -area (A) products (R D A) at a zero-bias voltage. In general, low R D A is preferable for high-frequency applications because it leads to a shorter RC time constant, and thereby resulting in a higher cut-off frequency ( f c ) of the system.…”
mentioning
confidence: 99%
“…This leads to the shorter RC time constant, and thereby resulting in higher cut-off frequency of the system, compared to the semiconductor-based diodes. Moreover, the MIM diode is suitable for mass-production due to its feasibility of employing conventional manufacturing growth methods, such as a sputtering, even on a flexible substrate 15) at low temperatures.…”
Section: Introductionmentioning
confidence: 99%