High-performance ReS<sub>2</sub> photodetectors enhanced by a ferroelectric field and strain field

Tai, Xiaochi; Chen, Yan; Wu, Shuaiqin; Jiao, Hanxue; Cui, Zhuangzhuang; Zhao, Dongyang; Huang, Xinning; Zhao, Qi‐Hua; Wang, Xudong; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao

doi:10.1039/d1ra08718e

Cited by 13 publications

(9 citation statements)

References 39 publications

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“…PL spectrum of the ReS 2 nanobelt shows a broad emission peak locates at about 1.5 eV (Figure 1e), consistent with previous report. [ 31 ] Owing to the anisotropic crystal structure, ReS 2 exhibits multiple scattering peak in Raman spectrum. As shown in Figure 1f, there are two low frequencies Ag‐like modes locating at 136.8 and 144.5 cm −1 corresponding to the out‐of‐plane vibrations of Re atoms and four Eg‐like modes locating at 153.6, 163.4, 218.2, and 238.1 cm −1 corresponding to the in‐plane vibrations of Re atoms.…”

Section: Resultsmentioning

confidence: 99%

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

Lin

Yao

Liu

et al. 2023

Advanced Optical Materials

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Polarization‐sensitive photodetectors can simultaneously sense the polarization states and intensity of light. Traditional polarimeters integrate photodetectors with complex and bulky optical systems such as polarizers and waveplates, which can not meet the current demand of on‐chip polarization photonic devices. This work has demonstrated a full linear polarization polarimeter based on two independent ReS2 nanobelt devices vertically stacked with a designed twist angle. The device achieves a high responsivity (959 A W−1) without applying an external gate voltage. In addition, the ReS2 nanobelt photodetector displays a strong polarization‐sensitive photoresponse with a linear dichroic ratio of 1.72 at 665 nm. By utilizing those two vertically stacked nanobelt devices, the linear polarization states of the incident light can be distinguished in a wide range of wavelengths from 590 to 800 nm. This study provides a simple route for future polarization‐sensitive optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

Lin

Yao

Liu

et al. 2023

Advanced Optical Materials

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“…11 A comparison of optoelectronic performances between our device and previously reported ferroelectric-gated 2D phototransistors in key figures of merit is shown in Figure 5g. [15][16][17]21,23,24,30,42,43 The 10.2 nm thick Al:HfO 2 ferroelectric layer enables nanoscale polarization control via the proposed novel bipolar pulses method to tune the channel in a fully depleted state. D*/Thk was defined to characterize the photoresponse sensitivity dependence of the thickness of the ferroelectric layer, where D* is detectivity and Thk represents the thickness of the dielectric layer, corresponding to the gating capacity of the floating-gate layer.…”

Section: Polarizable Nonvolatile Al:hfo 2 Gating In Monolayer Mos 2 P...mentioning

confidence: 99%

“…To address these challenges, two-dimensional (2D) materials-based phototransistors have been proposed due to their outstanding advantages of atomic scale in thickness, tunable band gap, absence of dangling bonds, and high carrier mobility. − As a typical 2D material, monolayer MoS 2 has strong light–matter interactions and layer-dependent optoelectronic properties, exhibiting an ultrasensitive photoresponsivity as high as 880 A W −1 for visible light . In recent years, more and more 2D phototransistors with profound performances have been achieved with ferroelectrics employed including poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), PbZr x Ti 1– x O 3 (PZT) and SrBi 2 Ta 2 O 9 (SBT). − Developing gate dielectric engineering with ferroelectrics in 2D phototransistors is an effective strategy for the optimization of photodetection due to their spontaneous reversal of polarization with the switching of an external electric field, which could introduce a negative capacitance effect to obtain gate voltage amplification or modulate the carrier type to define homojunction or heterojunction. − However, most of the phototransistors with high sensitivity inevitably operate with a high gate bias, which usually suffers from severe leakages and large power dissipation. Since the switchable and nonvolatile remanent polarization could provide an ultrahigh local electrostatic field in the semiconducting channel, ferroelectrics are expected to be employed as a floating gate to locally define the potential profile in a 2D channel, which contributes to the efficient modulation of carrier concentration and Schottky barrier height without constant gate voltage, enabling ultrasensitive photodetector with low power dissipation.…”

Section: Introductionmentioning

confidence: 99%

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS₂ Phototransistors

Meng,

She,

et al. 2024

ACS Appl. Mater. Interfaces

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Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS 2 as the channel and a 10.2 nm thick Al:HfO 2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO 2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS 2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 10 11 Jones per nanometer of gating layer (Jones nm −1 ) and photocurrent on/off ratio >10 4 nm −1 , which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS 2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.

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“…[226,227] A flexible photodetector on polyimide substrate with ferroelectric polymer film as a gate has been demonstrated to yield enhanced performance under strain modulation by bending. [304] ReX 2 transistors incorporating hexagonal boron nitride (h-BN) as a gate dielectric have demonstrated high field-effect mobility due to the reduced trap density at the channel-substrate interface (Table 4). [67,290,305,306]…”

Section: Recent Advances In Res 2 Based Photodetectorsmentioning

confidence: 99%

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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High-performance ReS₂ photodetectors enhanced by a ferroelectric field and strain field

Abstract: The flexible ReS2/P(VDF-TrFE) hybrid photodetector could be enhanced by a ferroelectric field and strain field.

Cited by 13 publications

References 39 publications

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS₂ Phototransistors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field

Abstract: The flexible ReS2/P(VDF-TrFE) hybrid photodetector could be enhanced by a ferroelectric field and strain field.

Cited by 13 publications

References 39 publications

High Performance Broadband Full Linear Polarimeter based on ReS2 Nanobelts

High Performance Broadband Full Linear Polarimeter based on ReS2 Nanobelts

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS2 Phototransistors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Contact Info

Product

Resources

About

High-performance ReS₂ photodetectors enhanced by a ferroelectric field and strain field

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

High Performance Broadband Full Linear Polarimeter based on ReS₂ Nanobelts

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS₂ Phototransistors