2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2015
DOI: 10.1109/csics.2015.7314509
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High Performance Resonant Tunneling Diode Oscillators for THz Applications

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Cited by 27 publications
(33 citation statements)
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“…Using this approach, 28 GHz and 76 GHz InP-based RTD oscillators with around 1 mW were realized [13], [14]. Thereafter, D-band oscillators operating at 125 GHz, 156 GHz and 166 GHz, with output power of 0.34 mW, 0.24 mW, 0.17 mW, respectively, were also demonstrated [15]. These oscillators used a shorted coplanar waveguide (CPW) lines of characteristic impedance (Z o ) of 50 Ω to realize the inductances required to resonate with the device self-capacitance for a given target oscillation frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Using this approach, 28 GHz and 76 GHz InP-based RTD oscillators with around 1 mW were realized [13], [14]. Thereafter, D-band oscillators operating at 125 GHz, 156 GHz and 166 GHz, with output power of 0.34 mW, 0.24 mW, 0.17 mW, respectively, were also demonstrated [15]. These oscillators used a shorted coplanar waveguide (CPW) lines of characteristic impedance (Z o ) of 50 Ω to realize the inductances required to resonate with the device self-capacitance for a given target oscillation frequency.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, a lot of work has been done by both industry and academia to develop terahertz communications [1], [2]. Resonant tunnelling diodes (RTDs) have been demonstrated to work as compact sources at room temperatures in the terahertz and sub-terahertz band [3]- [5]. RTD's therefore have the potential to make sub-Terahertz communications feasible if successfully coupled to antennas.…”
Section: Introductionmentioning
confidence: 99%
“…Lower JP designs as those used in mm-wave oscillators [23][24][25] , on the other hand, employ large micro-sized RTD devices and so can provide high RF power in oscillator circuits due to the increased ∆I, do not suffer thermal stability issues and can be fabricated with photolithography. Such devices employ thicker barrier layers (>1.4 nm).…”
Section: Device Design Considerationsmentioning
confidence: 99%
“…Using this approach, 28 GHz and 76 GHz InP-based RTD oscillators with around 1 mW were realized 23,24 . Thereafter, D-band oscillators operating at 125 GHz, 156 GHz and 166 GHz, with output power of 0.34 mW, 0.24 mW, 0.17 mW, respectively, were also demonstrated 25 . These oscillators used shorted coplanar waveguide (CPW) lines of characteristic impedance (Z0) 50 Ω to realise the inductances required to resonate with the device self-capacitance for a given target oscillation frequency.…”
Section: Introductionmentioning
confidence: 99%