High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain

Sun, Ruize; Wang, Fangzhou; Luo, Pan; Xu, Wenjun; Wang, Yan; Liu, Chao; Chen, Wanjun; Zhang, Bo

doi:10.1109/ispsd49238.2022.9813682

Cited by 2 publications

(1 citation statement)

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“…In contrast, the threshold voltages of Si- and SiC-based metal-oxide-semiconductor field-effect transistor (MOSFET) devices range from 2.5 V to 6 V, and the gate-breakdown voltages exceed 18 V, which is much higher than those of p-GaN-based HEMT devices, as shown in Table 2 . This suggests that the conduction resistance of a MOSFET can be efficiently reduced by increasing the gate-driving voltage [ 12 ].…”

Section: Problems To Be Solvedmentioning

confidence: 99%

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Wang,

Nan,

Tian

et al. 2023

Micromachines

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As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-power applications due to the normally off operation and robust gate reliability. However, the threshold and gate-breakdown voltages are relatively low compared with Si-based and SiC-based power MOSFETs. The epitaxial layers and device structures were optimized to enhance the main characteristics of pGaN HEMTs. In this work, various methods to improve threshold and gate-breakdown voltages are presented, such as the top-layer optimization of the pGaN cap, hole-concentration enhancement, the low-work-function gate electrode, and the MIS-type pGaN gate. The discussion of the main gate characteristic enhancement of p-type GaN gate HEMTs would accelerate the development of GaN power electronics to some extent.

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Section: Problems To Be Solvedmentioning

confidence: 99%