High-Performance RF Power Amplifier Module Using Optimum Chip-Level Packaging Structure

Nam, Hyosung; Kim, Jihoon; Jeon, Junho; Jhon, Hee‐Sauk; Kim, Jung-Hyun

doi:10.1109/tie.2021.3088328

Cited by 11 publications

(1 citation statement)

References 40 publications

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“…However, the actual power density is currently only 4–5 W/mm [ 6 , 7 ] due to the limitation in cooling capacity. Particularly, the hotspot generated by the accumulation of heat in the near-junction region leads to serious degradation, for example, in gain, output power, and power-added efficiency [ 8 , 9 ], limiting the performance of high-power output. Therefore, cooling technology has become the key to further enhancing the performance of AlGaN/GaN HEMT devices.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors

Song,

Chen,

Wang

et al. 2023

Micromachines

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Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-embedded cooling (CE-cool) are compared. The influences of distinct geometric parameters and operating conditions on thermal resistance are investigated. The results show that the thermal resistances of NC-cool and CE-cool are almost the same as each other. Decreasing microchannel base thickness (hb) significantly increases the thermal resistance of CE-cool, and when its thickness is less than a critical value, NC-cool exhibits superior cooling performance than CE-cool. The critical thickness increases when decreasing the heat source pitch (Ph) and the convective heat transfer coefficient (hconv) or increasing the thermal conductivity of the substrate (λsub). Moreover, increasing Ph or λsub significantly improves the thermal resistance of three cooling schemes. Increasing hconv significantly decreases the thermal resistances of NC-cool and CE-cool while hardly affecting the thermal resistance of R-cool. The influence of the boundary thermal resistance (TBR) on the thermal resistance significantly increases at higher λsub and larger hconv.

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