High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Abstract

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.

Research advances on III–V MOSFET electronics beyond Si CMOS

“…Recently, other non-selfaligned inversion-channel In 0.53 Ga 0.47 As MOSFETs using ALD-Al 2 O 3 as a gate dielectric were also demonstrated [31], in that an 0.5-mm gate length In 0.53 Ga 0.47 As MOSFET with an ALD-Al 2 O 3 gate oxide 8 nm thick gave a maximum drain current of 367 mA/mm, and a transconductance of 130 mS/mm [32]. More recently, a 0.4-mm gate-length inversion-channel In 0.65 Ga 0.35 As MOSFET with an even higher In content and an ALD-Al 2 O 3 gate oxide 10 nm thick showed a maximum drain current of 1.05 A/ mm, and a transconductance of 350 mS/mm [33]. Nonetheless, the non-self-aligned process is impractical for device integration, due to the complexity of mask alignment as well as the unavoidable parasitic resistance.…”

“…Nonetheless, the non-self-aligned process is impractical for device integration, due to the complexity of mask alignment as well as the unavoidable parasitic resistance. Recently, we have succeeded in attaining self-aligned inversion-channel In 0.53-Ga 0.47 As MOSFETs of 1-mm gate length by employing a MBEdeposited gate dielectric stack of Al 2 O 3 (2 nm)/GGO(7 nm) and TiN metal gate [33]. In situ deposited Al 2 O 3 was used to protect GGO from absorbing moisture during fabrication of devices, and TiN was chosen due to its suitable work function and thermal stability.…”

“…The maximum drain current I d and transconductance g m of representative III-V enhancement mode nMOSFETs reported in the last decade are summarized in Fig. 5a and b, respectively, for comparison [33]. Table 1 Summary of GGO scalability and relevant electrical properties, including GGO dielectric constant (k), flat-band voltage (V fb ), frequency dispersion of capacitance at accumulation, leakage current density at V g =V fb +1 V, interfacial density of states (D it ) near the mid-gap, and GGO EOT values.…”

Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

“…These oxides have been employed to fabricate depletion-mode (D-mode) [9,10] and inversion-channel InGaAs MOSFET [11][12][13][14][15]. In comparison, the D it 's measured in the GaAs MOS capacitors (MOSCAPs) using MBE-GGO are in the range of $10 11 cm À2 eV À1 , one order of magnitude lower than those of capacitors using ALD oxides.…”

MBE—Enabling technology beyond Si CMOS

“…Already, the in-situ multi-chamber MBE/analysis system [4,5] has made pioneering contributions to the InGaAs MOSFETs [6][7][8][9][10][11][12]; MBE-Ga 2 O 3 (Gd 2 O 3 ) (GGO) [5] and Gd 2 O 3 [6] films on (In)GaAs have achieved a low D it , low leakage current densities, and thermal stability at high temperatures, required for fabricating self-aligned inversion-channel InGaAs MOSFET. Indeed, the first inversion-channel GaAs and InGaAs MOSFETs [7][8][9], and a CMOS [13] were demonstrated with GGO as a gate dielectric.…”