High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires

Zhang, Mingxiang; Liu, Ying; Yang, Meng-Qi; Zhang, Wen; Zhou, Jinyuan; Xie, Erqing; Pan, Xiaojun; Li, Shibo

doi:10.1016/j.apsusc.2018.04.225

Cited by 61 publications

(24 citation statements)

References 18 publications

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“…[ 28 ] These superior properties render GaN as suitable applied for achieving high‐performance self‐powered UV photodetectors. [ 13,29,30 ] Effective p‐type GaN materials and homogeneous p‐n junction devices are difficult to fabricate; in this regard, the achievement of 1D GaN array/Si heterojunction‐based self‐powered UV photodetector with 3.4 × 10 12 Jones, a high photodetectivity demonstrates that heterojunction is the most promising structure in self‐powered photodetector devices. [ 31 ] Considering the chemical stability, low cost, and abundance of many transition metal oxides (TMOs) semiconductors, scholars have focused on fabrication of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction

Zheng

Tang

et al. 2020

Advanced Optical Materials

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Self‐powered UV photodetectors are highly desirable for applications in space communications and environmental monitoring. However, most self‐powered UV photodetectors exhibit unimpressive performance in weak signal detection. Herein, a self‐powered UV photodetector based on the core–shell GaN/MoO3–x nanorod array (NRA) heterojunction system is demonstrated. Homogeneous MoO3–x layers are deposited on GaN NRAs by a simple one‐step physical vapor deposition method. The photodetector device shows an ultrahigh specific detectivity of 2.7 × 1015 Jones at 355 nm without any power supply. Further analyses reveal a responsivity of 160 A W−1 and a high UV–vis rejection ratio (R355 nm/R400 nm) of 2.0 × 104 under zero bias. The self‐powered device also has a fast response speed with a rise/fall time of 73/90 µs. As a result, the self‐powered photodetector, featuring ultrahigh detectivity and responsivity along with fast response, exhibits great potential for applications in next‐generation UV detection. The core–shell NRA structure heterojunction design provides a valuable direction for realizing nanoscale self‐powered UV photodetectors.

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Section: Introductionmentioning

confidence: 99%

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction

Zheng

Tang

et al. 2020

Advanced Optical Materials

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“…Gallium nitride (GaN) has excellent properties, such as direct wide bandgap (3.4 eV), high electron mobility, large saturation velocity, and good thermal stability, and has been widely used for fabricating UV PDs [25,26,27]. Although many impressive GaN-based devices have been constructed [28,29,30], the performance of available GaN-based UV PDs is still unsuitable for real applications due to their low photo detectivity and quantum efficiency, resulting from low light absorption and the quick recombination of photo-generated electron–hole pairs [31].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

Xiao

Liu

et al. 2019

Nanomaterials

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Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.

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“…Large-scale computational 3,21 and synthetic efforts (notably by the groups of Francis DiSalvo, Rainer Niewa, Wolfgang Schnick, and Duncan Gregory) to explore their compositional space are underway. These compounds are being investigated for energy conversion and storage, 22 solar-driven CO2 reduction in Z-scheme-inspired photoelectrochemical cells, 23 as alternatives to metals, metal oxides and metal sulfides in heterogeneous catalysis, 24 in quantum information processing, 25 as piezoelectric 26,27 and photoluminescent 28 materials, electrocatalysts, 29,30 electrochemical sensors, 31 photocatalysts, 32,33 photovoltaics, [34][35][36] photodetectors, 37,38 light-emitting diodes, 39,40 thermoelectrics, 26,41 superconductors, [42][43][44] as hard coating 45 and ultrahard materials 46 (in their pernitride form), etc. With a relatively slow start compared to oxides and oxysalts, it is no surprise that some of the most exciting properties of these materials are currently being realized, and that much promise lies ahead in the exploratory synthesis of functional inorganic nitrides.…”

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confidence: 99%

On the Crystal Chemistry of Inorganic Nitrides: Crystal-Chemical Parameters and Opportunities in the Exploration of Their Compositional Space

Gagné¹

2020

Preprint

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The scarcity of nitrogen in Earth's crust, combined with challenging synthesis, have made inorganic nitrides a relatively-unexplored class of compounds compared to their naturally-abundant oxide counterparts. To facilitate exploration of their compositional space via a priori modeling, and to help a posteriori structure verification not limited to inferring the oxidation state of redox-active cations, we derive a suite of bond-valence parameters and Lewis-acid strength values for 76 cations observed bonding to N 3-, and further outline a baseline statistical knowledge of bond lengths for these compounds. We examine structural and electronic effects responsible for the functional properties and anomalous bonding behavior of inorganic nitrides, and identify promising venues for exploring uncharted compositional spaces beyond the reach of highthroughput computational methods. We find that many mechanisms of bond-length variation ubiquitous to oxide and oxysalt compounds (e.g., lone-pair stereoactivity, the Jahn-Teller and pseudo Jahn-Teller effects) are similarly pervasive in inorganic nitrides, and are occasionally observed to result in greater distortion magnitude than their oxide counterparts. We identify inorganic nitrides with multiply-bonded metal ions as a promising venue in heterogeneous catalysis, e.g. in the development of a post-Haber-Bosch process proceeding at milder reaction conditions, thus representing further opportunity for exploring the functional properties of this emerging class of materials.

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High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires

Cited by 61 publications

References 18 publications

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

On the Crystal Chemistry of Inorganic Nitrides: Crystal-Chemical Parameters and Opportunities in the Exploration of Their Compositional Space

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High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires

Cited by 61 publications

References 18 publications

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO3–x Nanorod Array Heterojunction

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO3–x Nanorod Array Heterojunction

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

On the Crystal Chemistry of Inorganic Nitrides: Crystal-Chemical Parameters and Opportunities in the Exploration of Their Compositional Space

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Product

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A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO_3–_x Nanorod Array Heterojunction