High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Wang, Jie; Jiang, Qinfeng; Luo, Xiaorong; Huang, Junyue; Yang, Kemeng; Ma, Zhenqiang; Fang, Jian; Yang, Fei

doi:10.1088/1674-1056/ac7cd5

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…Silicon carbide (SiC) material, known for its wide bandgap, high critical breakdown electric field strength and high thermal conductivity, replaces silicon as a new generation power semiconductor material [1][2][3]. The 4H-SiC trench MOSFET (TMOS) has gained significant attention as an emerging power semiconductor device with advantages such as high breakdown voltage (BV), high current capacity, and fast switching speed, which made it widely employed in power-integrated circuits [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Yao,

Liu,

et al. 2024

IET Power Electronics

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This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K deep trench dielectric in the drift region. Firstly, the high‐K gate dielectric together with the metal‐forming high‐K metal gate structure, which increases the gate oxide capacitance (COX), reduces the threshold voltage (VTH) and the specific on‐resistance (Ron,sp). Secondly, the extended high‐K deep trench dielectric not only modulates the electric field in the drift region by introducing a new electric field peak at the bottom of the high‐K deep trench dielectric, thereby enhancing the breakdown voltage (BV), but also improves the doping concentration (ND) of the drift region by the assist depletion effect of the high‐K dielectric, further optimizing the forward conduction characteristics. Simulation results demonstrate that when compared to the conventional TMOS, the INHK‐TMOS using HfO2 exhibits a 52.6% reduction in VTH, a 52.1% reduction in Ron,sp, a 20.3% increasement in BV and a 202.3% improvement in figure of merit.

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Section: Introductionmentioning

confidence: 99%

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Yao,

Liu,

et al. 2024

IET Power Electronics

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“…The used processes for synthesising the SiC powders produce surface oxide impurities of particles, such as SiO 2 which is undesirable for metal-oxide-semiconductor field-effect transistor (MOSFET) applications [1,2]. SiO 2 has strong covalent bonds.…”

Section: Introductionmentioning

confidence: 99%

Sintering β-SiC nanopowder using novel microwave-current assisted sintering technique: preliminary study

Al-Jothery,

Albarody,

Sultan

et al. 2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Silicon carbide is a crucial structure material because of its wide applications in different fields, such as electronics. The impurities have negative impact on the homogenous sinterability of nano SiC during the sintering process, especially the silicon dioxide. So, the consolidation of SiC nanopowders was conducted by the microwave-current assisted sintering process. Field emission scanning electron microscope (FESEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD) were utilised to examine the nanopowders and sintered samples of SiC. The results showed that the smallest average grain sizes of sintered specimens of treated and untreated-SiC nanopowders were 331 and 428 nm, respectively. The relative densities of sintered specimens of treated and untreated-SiC nanopowders were around 97.1% and 93.8%, respectively. In conclusion, the nanostructure of sintered SiC was the benchmark of the microwave-current assisted sintering technique.

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Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics

Gao,

Zhang,

Wang

et al. 2024

Microelectronics Journal

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High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Cited by 4 publications

References 21 publications

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Sintering β-SiC nanopowder using novel microwave-current assisted sintering technique: preliminary study

Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics

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