High-Performance Silicon–Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard‐Granger, Guillaume; Dufourcq, J.

doi:10.1007/s11664-015-3761-1

Cited by 45 publications

(18 citation statements)

References 4 publications

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“…The diffusion barrier between the (n & p)-type and the solder consists of a thin layer of Au/Ti (300/100 nm). This TEG was tested on a dedicated bench [25] in CEA laboratory (Grenoble-France) with a large number of thermal cycles applied on the hot side of TEG between 150 and 400 C, with 3 min of holding at 400 C for a total duration of 15 min per cycle. The cold side is maintained at 50 C during thermal test.…”

Section: Methodsmentioning

confidence: 99%

Thermal stability of Mg2Si0.55Sn0.45 for thermoelectric applications

Mejri

Malard

Thimont

et al. 2020

Journal of Alloys and Compounds

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Understanding the thermal stability of the Mg 2 (Si,Sn) system is essential to define their safe temperatures of service. Despite its good thermoelectric performance, Mg 2 (Si,Sn) is subject to a phase separation during thermal cycling due to the miscibility gap, which leads to a degradation of its thermoelectric properties and affects its performance during device operation. Isothermal annealing at 500 C and 750 C were performed with different annealing time to investigate thermal stability of Mg 2 (Si,Sn). During the heat treatment, two phases were formed associated with porosity in the matrix. In addition, thickness of specimen was tracked and a significant expansion was detected. This phenomenon is attributed to the Kirkendall effect. The composition and the structure of the two forming phases were investigated by electron probe microanalysis and X-ray diffraction. Finally, the optimized thermal treatment allowed to stabilize the Mg 2 (Si,Sn) without porosity and the presence of two thermodynamically stabilized phase (Mg 2 Si 0.41 Sn 0.59 and Mg 2 Si 0.58 Sn 0.42) leading to a better reliability of the silicide thermoelectric modules.

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Section: Methodsmentioning

confidence: 99%

Thermal stability of Mg2Si0.55Sn0.45 for thermoelectric applications

Mejri

Malard

Thimont

et al. 2020

Journal of Alloys and Compounds

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“…Отметим, что сегрегация Sb в твeрдых растворах GeSi ранее наблюдалась в работах [15,16] для тонкоплeночных структур. Для оптимальных условий легирования получено значение коэффициента ZT, равное 0.32 при температуре 350 • С. Данное значение несколько уступает величинам ZT, полученным для аналогичных материалов, легированных атомами фосфора до высокой концентрации (ZT ≈ 0.45 в работе [8] и ZT ≈ 0.4 в работе [17]). Подчеркнeм, что в исследуемой нами системе имеется потенциал для оптимизации свойств за счeт варьирования режимов спекания и параметров наноструктуры, а также за счeт методов активации примеси, таких, как термический отжиг.…”

Section: результаты экспериментаunclassified

Легирование термоэлектрических материалов на основе твeрдых растворов SiGe в процессе их синтеза методом электроимпульсного плазменного спекания

Дорохин¹,

Demina²,

Erofeeva³

et al. 2019

Физика И Техника Полупроводников

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The results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si_1 –_ x Ge_ x solid solutions doped with Sb to a concentration of 0–5 at % are presented. It was found that, at Sb concentration below 1 at %, efficient doping of the solid solution was carried out during the sintering process, which allowed us to form a thermoelectric material with a relatively high thermoelectric figure of merit. An increase in the concentration of antimony in the range of 1–5 at % led to a change in the mechanism of doping, which resulted in an increase in the resistance of materials and the segregation of Sb into large clusters. For such materials, a significant decrease in the Seebeck coefficient and thermoelectric figure of merit was noted. The highest obtained thermoelectric figure of merit (ZT) with Sb doping was 0.32 at 350°C, which is comparable with known analogues for the Ge_ x Si_1 –_ x solid solution.

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“…The striking example of using RITEG is space probe “Voyager-2”, the most distant evidence of human beings out of Earth. There is SiGe-based semiconductor thermoelectric material installed on “Voyager-2”, which produces electricity from the heat of the plutonium core at 1000 °C with the ZT value reaching 1 only at such elevated temperatures [24]. Similar systems of autonomous power supply are used in many other ground-level frames (radio beacon, weather stations and etc.).…”

Section: Introductionmentioning

confidence: 99%

TiO2–SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials

2019

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The review embraces a number of research papers concerning the fabrication of oxide thermoelectric systems, with TiO2−SrTiO3 biphase ceramics being emphasized. The ceramics is particularly known for a two-dimensional electron gas (2DEG) forming spontaneously on the TiO2/SrTiO3 heterointerface (modulation doping), unlike ordinary 2DEG occurrence on specially fabricated thin film. Such effect is provided by the SrTiO3 conduction band edge being 0.40 and 0.20 eV higher than that for anatase and rutile TiO2, respectively. That is why, in the case of a checkered arrangement of TiO2 and SrTiO3 grains, the united 2D net is probably formed along the grain boundaries with 2DEG occurring there. To reach such conditions, there should be applied novelties in the field of ceramics materials science, because it is important to obtain highly dense material preserving small (nanoscale) grain size and thin interface boundary. The review also discusses some aspects of reactive spark plasma sintering as a promising method of preparing perovskite-oxide TiO2−SrTiO3 thermoelectric materials for high-temperature applications.

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High-Performance Silicon–Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

Cited by 45 publications

References 4 publications

Thermal stability of Mg2Si0.55Sn0.45 for thermoelectric applications

Thermal stability of Mg2Si0.55Sn0.45 for thermoelectric applications

Легирование термоэлектрических материалов на основе твeрдых растворов SiGe в процессе их синтеза методом электроимпульсного плазменного спекания

TiO2–SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials

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