High-performance single-walled carbon nanotube transparent conducting film fabricated by using low feeding rate of ethanol solution

Ding, Er‐Xiong; Zhang, Qiang; Wei, Nan; Khan, Abu Taher; Kauppinen, Esko I.

doi:10.1098/rsos.180392

Cited by 26 publications

(27 citation statements)

References 27 publications

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“…2(c) and Fig. S2 in the ESM), which also occurs in our ethanol system [10,17]. Ma et al [27] suggested that an excess of hydrogen induced fast decomposition of the hydrocarbons (ortho-xylene and acetylene were chosen as a hybrid carbon source), resulting in the accumulation of carbon byproducts on the catalyst surface and slowing down the nanotube growth process.…”

Section: Effects Of H 2 and N 2 On Swcnt Yield And Diametersupporting

confidence: 62%

“…The description of the four point probe system for sheet resistance measurement can be found elsewhere [10]. Each sheet resistance data point is the average of three measurement values from different parts of the SWCNT film.…”

Section: Swcnt Filmsmentioning

confidence: 99%

“…We have previously studied the effect of feeding rate on the optoelectronic performance of SWCNT films using ethanol as the carbon source, and found that a lower precursor feeding rate of precursors produces straight SWCNTs with narrower bundles [10]. Herein, where toluene was chosen as a new carbon source for SWCNT synthesis for the fabrication of TCFs, the feeding rate of the precursors should be also optimized to accommodate the other growth parameters.…”

Section: Effect Of Feeding Rate On Swcnt Bundle Diametermentioning

confidence: 99%

“…To simply evaluate the optoelectronic performance of a TCF, the sheet resistance and film transmittance (T) at 550 nm are required. The sheet resistance and transmittance of a SWCNT TCF are affected by nanotube diameter [6], length [7] and crystallinity [8], as well as the diameter of the SWCNT bundle [9], film morphology [10], the amount of catalyst particles in the film [8] and the purity of semiconducting SWCNTs (s-SWCNTs) [11]. The optoelectronic performance of pristine SWCNT TCFs does not usually meet the requirements of practical device applications, which require a low sheet resistance combined with high transparency.…”

Section: Introductionmentioning

confidence: 99%

“…Ethanol (C2H6O) [10] has often been employed as the carbon source in producing SWCNTs, since this results in relatively high yield and a competitive TCF performance compared with using either carbon monoxide (CO) [6] or ethylene (C2H4) [13] as the carbon source. However, further improvements in SWCNT yields and in the optoelectronic performance of TCFs are required for large-scale applications.…”

Section: Introductionmentioning

confidence: 99%

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High-performance transparent conducting films of long single-walled carbon nanotubes synthesized from toluene alone

et al. 2019

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Single-walled carbon nanotube (SWCNT) transparent conducting films (TCFs) are attracting increasing attention due to their exceptional optoelectronic properties. Toluene is a proposed carbon source for SWCNT synthesis, but the growth parameters of SWCNTs and their TCF optoelectronic performance (i.e., sheet resistance versus transmittance) have been insufficiently evaluated. Here, we have for the first time reported a systematic study of the fabrication of high-performance SWCNT TCFs using toluene alone as the carbon source. The mechanisms behind each observed phenomenon were elucidated using optical and microscopy techniques. By optimizing the growth parameters, high yields of SWCNT TCFs exhibiting a considerably low sheet resistance of 57 Ω/sq at 90% transmittance were obtained. This competitive optoelectronic performance is mainly attributable to long SWCNT bundles (mean length is 41.4 μm) in the film. Additionally, a chirality map determined by electron diffraction displays a bimodal distribution of chiral angles divided at 15°, which is close to both armchair and zigzag edges. Our study paved the way towards scaled-up production of SWCNTs for the fabrication of high-performance TCFs for industrial applications.

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Section: Effects Of H 2 and N 2 On Swcnt Yield And Diametersupporting

confidence: 62%

Section: Swcnt Filmsmentioning

confidence: 99%

Section: Effect Of Feeding Rate On Swcnt Bundle Diametermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-performance transparent conducting films of long single-walled carbon nanotubes synthesized from toluene alone

et al. 2019

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Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors

et al. 2020

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Herein, a simple and effective technique, “multidipping technique,” is implemented to rapidly form random networks of single‐walled carbon nanotubes (SWCNTs) used as a channel material in solution‐processed thin‐film transistors (TFTs). The multidipping process consists of repetition of dipping a substrate into a dispersed semiconducting SWCNT solution and rinsing the substrate between each dipping process. Compared with the conventional dipping method, this technique reduces total deposition time required to form high‐quality SWCNT networks by more than half and simultaneously improves the electrical performances of SWCNT TFTs. These phenomena are also comprehensively analyzed with experiments and microscopic images of the channel region, which well show morphology of the SWCNT networks. It is believed that the low‐temperature process and facile deposition method of SWCNT networks can provide a guideline for high‐throughput fabrication of high‐performance SWCNT TFT arrays in flexible active matrix sensor array and display applications.

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Electron‐Beam Manipulation of Silicon Impurities in Single‐Walled Carbon Nanotubes

Mustonen

Markevich

Tripathi

et al. 2019

Adv Funct Materials

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The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55-60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps were recorded and the relevant displacement cross sections estimated. Molecular dynamics simulations show that even in 2 nm SWCNTs the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors.Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in two-dimensional materials may enable the fabrication of tunable electronic resonators and other devices. 1 arXiv:1902.03972v1 [cond-mat.mtrl-sci]

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High-performance single-walled carbon nanotube transparent conducting film fabricated by using low feeding rate of ethanol solution

Cited by 26 publications

References 27 publications

High-performance transparent conducting films of long single-walled carbon nanotubes synthesized from toluene alone

High-performance transparent conducting films of long single-walled carbon nanotubes synthesized from toluene alone

Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors

Electron‐Beam Manipulation of Silicon Impurities in Single‐Walled Carbon Nanotubes

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