High-Performance SLCFETs for Switched Filter Applications

Parke, Justin; Freitag, R.G.; Torpey, Matt; Howell, Robert S.; Stewart, Eric J.; Snook, Megan; Wathuthanthri, Ishan; Gupta, Shalini; Nechay, Bettina; King, Matthew R.; Borodulin, Pavel; Renaldo, Karen; Henry, H.G.

doi:10.1109/csics.2016.7751044

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…These filter banks demonstrated incorporate tuning/switching elements positioned either before multiple channels (switched multiplexer design) or within each filter inside a band (tunable BPF design). [5][6][7][8] However, all the aforementioned switching technologies require complex biasing circuitry for their operation. This unavoidably introduces performance challenges due to parasitic effects from the bias circuitry, while also posing difficulties in circuit design, integration, and fabrication.…”

Section: Introductionmentioning

confidence: 99%

Dynamically tuning and reconfiguring microwave bandpass filters using optical control of switching elements

Li,

Zahedi,

Shi

et al. 2024

Micro & Optical Tech Letters

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We report a novel approach for dynamically tuning and reconfiguring microwave bandpass filters (BPFs) based on optically controlled switching elements using photoconductivity modulation in semiconductors. For a prototype demonstration, a BPF circuit featuring a second‐order design using two closely coupled split‐ring resonators embedded with multiple silicon chips (as switching elements) was designed, fabricated, and characterized. The silicon chips were optically linked to fiber‐coupled laser diodes (808 nm light) for switching/modulation, enabling dynamic tuning and reconfiguring of the BPF without any complex biasing circuits. By turning on and off the two laser diodes simultaneously, the BPF response can be dynamically reconfigured between bandpass and broadband suppression. Moreover, the attenuation level of the passband can be continuously adjusted (from 0.7 to 22 dB at the center frequency of 3.03 GHz) by varying the light intensity from 0 to 40 W/cm2. The tuning/reconfiguring 3‐dB bandwidth is estimated to be ~200 kHz. In addition, the potential and limitations of the proposed approach using photoconductivity modulation are discussed. With the strong tuning/reconfiguring capability demonstrated and the great potential for high‐frequency operation, this approach holds promise for the development of more advanced tunable filters and other adaptive circuits for next‐generation sensing, imaging, and communication systems.

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Section: Introductionmentioning

confidence: 99%

Dynamically tuning and reconfiguring microwave bandpass filters using optical control of switching elements

Li,

Zahedi,

Shi

et al. 2024

Micro & Optical Tech Letters

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“…Such multichannel SLCFETs have produced a high ON-current (> 3 A/mm) as well as a low ON-resistance, RON (< 0.28 Ω-mm) [1]. [4]. Single pole double throw (SPDT) RF switches built using the 6 channel SLCFETs have demonstrated, in DC-50 GHz performance, low insertion loss (< 1dB) and high isolation (> 25 dB) [15].…”

Section: Introductionmentioning

confidence: 99%

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Kumar

Uren

Smith

et al. 2023

2023 IEEE International Reliability Physics Symposium (IRPS)

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Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

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“…They benefit from a reduced on-state resistance and low off-state capacitance, resulting in a cut off frequency up to eight times higher than other FET based RF switches [4]. SLCFETs can provide the low loss, broadband performance of RF MEMS as well as the speed and reliability of FETs [5]. SLCFETs have small feature sizes and heating is localized within a channel region smaller than 160 nm, making heat extraction a challenge.…”

Section: Introductionmentioning

confidence: 99%

Thermal Transport in Superlattice Castellated Field Effect Transistors

Middleton

Dalcanale

Pomeroy

et al. 2019

IEEE Electron Device Lett.

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Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermography measurements, and gate resistance thermometry. Finite element simulations were used to predict the peak temperatures and show that the three-dimensional gate structure aids the extraction of heat generated in the channel. The calculated heat flux in the castellations shows that the gate metal provides a high thermal conductivity path, bypassing the lower thermal conductivity superlattice, reducing channel temperatures by as much as 23%.

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High-Performance SLCFETs for Switched Filter Applications

Cited by 9 publications

References 13 publications

Dynamically tuning and reconfiguring microwave bandpass filters using optical control of switching elements

Dynamically tuning and reconfiguring microwave bandpass filters using optical control of switching elements

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Thermal Transport in Superlattice Castellated Field Effect Transistors

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