2024
DOI: 10.1021/acsami.4c01806
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High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN

Jianguo Zhao,
Rui Yin,
Ru Xu
et al.

Abstract: A high-performance planar structure metal−semiconductor−metal-type solar-blind photodetector (SBPD) was fabricated on the basis of (010)-plane β-Ga 2 O 3 thermally oxidized from nonpolar (110)-plane GaN. A full width at half maximum of 0.486°was achieved for the X-ray rocking curve associated with (020)-plane β-Ga 2 O 3 , which is better than most reported results for the heteroepitaxially grown (−201)-plane β-Ga 2 O 3 . As a result of the relatively high crystalline quality, a dark current as low as 6.30 × 10… Show more

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