High-Performance Structure of Guard Ring in Avalanche Diode for Single Photon Detection

Wang, Wei; Wei, Zhenqi

doi:10.4236/ijcns.2017.108b001

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…A guard ring formed of lower p-type and n-type annular areas is also used to prevent lateral breakdown [44]. These SPADs are backside illuminated.…”

Section: Resultsmentioning

confidence: 99%

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Helleboid¹,

Rideau²,

Nicholson³

et al. 2022

J. Phys. D: Appl. Phys.

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We present an efﬁcient simulation method for electronic transport and avalanche in single-photon avalanche diodes (SPAD). Carrier transport is simulated in the real space using a particle Monte Carlo approach based on the Fokker-Planck point of view on an advection-diffusion equation, that enables us to reproduce mobility models, including electric ﬁelds and doping dependencies. The avalanche process is computed thanks to impact ionization rates implemented using a modiﬁed Random Path Length algorithm. Both transport and impact ionization mechanisms are computed concurrently from a statistical point of view, which allows us to achieve a full multi-particle simulation. This method provides accurate simulation of transport and avalanche process suitable for realistic three-dimensional SPADs, including all relevant stochastic aspects of these devices, together with a huge reduction of the computational time required, compared to standard Monte Carlo methods for charge carrier transport. The efﬁciency of our method empowers the possibility to precisely evaluate SPADs ﬁgures of merit and to explore new features that were untrackable by conventional methods. An extensive series of comparisons with experimental data on state-of-the art SPADs shows a very good accuracy of the proposed approach.

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“…A guard ring formed of lower p-type and n-type annular areas is also used to prevent lateral breakdown [44]. These SPADs are backside illuminated.…”

Section: Resultsmentioning

confidence: 99%

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Helleboid¹,

Rideau²,

Nicholson³

et al. 2022

J. Phys. D: Appl. Phys.

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show abstract

“…These architectures consist of p-type and n-type doped regions, forming the main junction, also called avalanche region. In addition, a guard ring, which is made of peripheral annular regions of lower p-type and n-type doping is designed to prevent lateral breakdown [17], [18]. Additional high doping at the electrodes allows us to achieve low Ohmic contact resistance.…”

Section: Cathodementioning

confidence: 99%

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Helleboid

Rideau

Grebot

et al. 2022

IEEE J. Electron Devices Soc.

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A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers' trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.Index Terms-avalanche breakdown probability, breakdown voltage, jitter, photon detection efficiency (PDE), single-photon avalanche diode (SPAD), Technology computer-aided design (TCAD) I. INTRODUCTION AND DEVICE STRUCTURESS INGLE-Photon Avalanche Diodes (SPAD) are key optoelectronic detectors for medical imaging, camera ranging, and automotive laser imaging detection and ranging (LiDAR) applications. Currently, the device leading the market of SPADs is a micrometric silicon (Si) PN junction associated with nearby CMOS electronics biasing the system above the breakdown voltage (BV) [1].The main figure of merit for the sensor sensitivity is the photon detection efficiency (PDE), which is the probability that a photon hitting the SPAD is detected. It can be evaluated by multiplying the probability that an incoming photon hits the photosensitive area of the sensor, the fill factor (FF), by the probability that the photon is absorbed within the Manuscript submitted the February 8th 2022. The authors gratefully acknowledge VIZTA project (https://www.vizta-ecsel.eu/) for

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“…Wei Wang proposed a novel structure of guard ring in avalanche diode which put the floating guard ring outside the p‐well guard ring. Compared with other guard rings, the proposed one can reach the lower electric field intensity of the edge under the same bias voltage and the larger maximum bias voltage [12].…”

Section: Introductionmentioning

confidence: 99%

A novel design of a silicon PIN diode for increasing the breakdown voltage

Rezaei

Nayeri

Rezaeian

2022

IET Circuits, Devices & Syst

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This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.

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High-Performance Structure of Guard Ring in Avalanche Diode for Single Photon Detection

Cited by 6 publications

References 9 publications

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

A novel design of a silicon PIN diode for increasing the breakdown voltage

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