High-Performance Surface Acoustic Wave Devices Using LiNbO₃/SiO₂/SiC Multilayered Substrates

5.7 GHz Ultrasensitive Shear Horizontal-Surface Acoustic Wave Humidity Sensor Based on LiNbO3/SiO2/SiC Heterostructures with a Sensitive Layer of Polyethyleneimine-SiO2 Nanocomposites

“…The resonant frequencies are from 1 to 15 GHz and increase when the IDT wavelength is reduced from 2000 to 400 nm. The reasons for the good performance of such LiNbO 3 /SiO 2 /SiC devices include two key factors, i.e., the formation of a high-quality piezoelectric LiNbO 3 film (with few defects, a flat surface, and a high electromechanical coupling coefficient), and usage of a high-velocity insulation substrate (resulting in generation of guided wave mode, confined energy, and enhanced interfacial effects). , …”

“…The reasons for the good performance of such LiNbO 3 / SiO 2 /SiC devices include two key factors, i.e., the formation of a high-quality piezoelectric LiNbO 3 film (with few defects, a flat surface, and a high electromechanical coupling coefficient), and usage of a high-velocity insulation substrate (resulting in generation of guided wave mode, confined energy, and enhanced interfacial effects). 22,23 Comsol simulation was conducted to verify these multimodal peaks and their vibration patterns. The simulated admittance results of SAW devices are shown in Figure 3a−f, indicating that the obtained frequencies of the SAW devices at different wavelengths are the same as those obtained from the experimental measurement.…”

Fractional Bandwidth up to 24% and Spurious Free SAW Filters on Bulk 15°YX-LiNbO3 Substrates Using Thickness-Modulated IDT Structures

“…The resonance frequency ( f r ) and the anti-resonance frequency ( f a ) of SAW devices can be extracted from the calculated admittance responses using frequency domain analysis [ 27 ]. Additionally, the SAW characteristics of devices, such as the resonance velocity ( V r ), the anti-resonance velocity (V a ), and electromechanical coupling coefficient K 2 can be determined according to the methods in [ 28 , 29 ].…”

Excitation and detection of acoustic phonons in nanoscale systems

“…The potential realization of many types of physical sensors using IDTs has led to an explosion of their use in modern mainstream technologies. 270,[272][273][274][275][276][277][278][279][280] In more recent years, improved nano-fabrication techniques have resulted in the development of high frequency IDTs operating up to the GHz regime. [281][282][283] Fundamental research has exploited the ability to generate phonons from a RF signal as well as read them out with excellent sensitivities, [284][285][286] and has used them to interact with a wide range of different systems such as optomechanical systems, 284 nitrogen-vacancy centers, 285 and superconducting qubits.…”