High performance suspended spiral inductor and band-pass filter by wafer level packaging technology

Zheng, Tao; Xu, Gaowei; Li, Luo

doi:10.1007/s00542-016-2977-1

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…A common method to fabricate thick buried oxide islands is to etch deep trenches into Si substrates followed by a SiO 2 deposition step either by PECVD 14,15 or thermal oxidation 16 . For example, the quality factor increased from 3.5 at 4.6 GHz to 7 at 7 GHz for inductors fabricated on 2µm-thick and 20-µm-thick oxide layers, respectively 16 The second approach is to induce an air gap between the winding conductors and substrate, resulting in suspended windings [17][18][19][20][21][22][23][24] . This is carried out by removing materials under the winding conductors, for example, by using sacrificial layers 25 or by etching the substrate under the inductor windings 18 .…”

Section: Rfmentioning

confidence: 99%

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

et al. 2021

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MEMS inductors are used in a wide range of applications in micro- and nanotechnology, including RF MEMS, sensors, power electronics, and Bio-MEMS. Fabrication technologies set the boundary conditions for inductor design and their electrical and mechanical performance. This review provides a comprehensive overview of state-of-the-art MEMS technologies for inductor fabrication, presents recent advances in 3D additive fabrication technologies, and discusses the challenges and opportunities of MEMS inductors for two emerging applications, namely, integrated power electronics and neurotechnologies. Among the four top-down MEMS fabrication approaches, 3D surface micromachining and through-substrate-via (TSV) fabrication technology have been intensively studied to fabricate 3D inductors such as solenoid and toroid in-substrate TSV inductors. While 3D inductors are preferred for their high-quality factor, high power density, and low parasitic capacitance, in-substrate TSV inductors offer an additional unique advantage for 3D system integration and efficient thermal dissipation. These features make in-substrate TSV inductors promising to achieve the ultimate goal of monolithically integrated power converters. From another perspective, 3D bottom-up additive techniques such as ice lithography have great potential for fabricating inductors with geometries and specifications that are very challenging to achieve with established MEMS technologies. Finally, we discuss inspiring and emerging research opportunities for MEMS inductors.

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Section: Rfmentioning

confidence: 99%

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

et al. 2021

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“…Zheng et al designed a 2.7 nH suspended inductor with maximum Q factor 49 at 8.2 GHz. Thick benzocyclobutene (BCB) was employed as the supporting dielectric and a backside cavity was etched and removed to improve the Q factor of the inductor [9]. Li et al presented a self-packaged high Q factor inductor based on substrate integrated suspended line technology, the substrate was designed hollowed in a specific shape to reduce the substrate loss [10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

2020

Micromachines

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Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s2). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor.

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Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

Sun²,

et al. 2022

Microelectronics Journal

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High performance suspended spiral inductor and band-pass filter by wafer level packaging technology

Cited by 4 publications

References 8 publications

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

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