High-performance Te-doped p-type MoS2 transistor with high-K insulators

Oh, Guen Hyung; Kim, Sang Il; Kim, Tae‐Wan

doi:10.1016/j.jallcom.2020.157901

Cited by 13 publications

(15 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In another study, a transition from n‐type conductance to p‐type conductance is achieved by incorporating Te atoms into MoS 2 . [ 181 ] Inspiringly, a remarkable room‐temperature hole mobility of 182 cm 2 V −1 s −1 is realized. Most recently, a bipolar to p‐type transition has been revealed in a V x W 1− x Se 2 FET as the V content increases from 0% to 1.9%.…”

Section: D Layered Materials Alloys For Electronic Device Applicationsmentioning

confidence: 99%

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Yao

Yang

2021

Advanced Science

View full text Add to dashboard Cite

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

show abstract

Section: D Layered Materials Alloys For Electronic Device Applicationsmentioning

confidence: 99%

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Yao

Yang

2021

Advanced Science

View full text Add to dashboard Cite

show abstract

“…Recently, phototransistors based on WSe 2 and MoS 2 have shown promising avenues for optoelectronic devices, with promising carrier transport properties, high on/off ratio, high light absorption coefficient, scalable thickness down to the monolayer and, most significantly, easy to introduce doping [2,[5][6][7][8][9][10][11]. However, these devices have shown limited photoresponsivity and detectivity due to the weak built-in electric field formed between WSe 2 and MoS 2 [6,9,10].…”

Section: Introductionmentioning

confidence: 99%

“…Among 2D transition metal dichalcogenides (TMDs), p-doping techniques have been widely reported as an effective tool to manipulate the properties of heterostructure phototransistors, including chemical doping with XeF 2 vapors, PPh 3 /AuCl 3 , low-energy phosphorus implantation, Te and H 2 gas, electrostatic split-gate configuration, ozone treatment and UV/ozone treatments [11][12][13][14][15][16][17]. Additionally, n-doping techniques have also been reported, including electron beam lithography, self-assembled monolayer, triphenylphosphine, lithium fluoride, nitrogen, zinc oxide and alkali metal compound-promoted chemical vapor deposition (CVD) [18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction

et al. 2023

View full text Add to dashboard Cite

Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is transferred onto the resulting p-doped WSe2 nanoflake. The built-in electric field of p-doped WSe2/MoS2 is stronger than that of pristine WSe2/MoS2. The p-n junction between p-doped WSe2 and MoS2 can separate more photogenerated electron–hole pairs and inject more electrons into MoS2 under laser illumination than pristine WSe2/MoS2. Thus, a high photoresponsivity (R) of ~1.28 × 105 A·W−1 and high specific detectivity (D*) of ~7.17 × 1013 Jones are achieved under the illumination of a 633 nm laser, which is approximately two orders higher than the best phototransistor based on a WSe2/MoS2 heterojunction. Our work provides an effective and simple method to enhance photoresponsivity and detectivity in two-dimensional (2D) heterojunction phototransistors, indicating the potential applications in fabricating high-performance photodetectors based on 2DLMs.

show abstract

“…However, MoS 2 FETs still suffer from large contact resistance due to Schottky barriers formed at the metal/MoS 2 interface as well as due to interlayer resistance and, even in their crystalline form, experience extrinsic mobility issues, such as charged impurity scattering, detrimental for applications. To alleviate contact resistance issues, low work function metals and N-type charge-transfer dopants have been investigated by several groups, but the contact resistance did not exhibit momentous reductions at RT (being reduced by a factor of ∼3 in the first case (i.e., from 3.3 to 1.1 kΩ·μm) and by a factor of ∼2 (i.e., from 56.61 to 26.65 kΩ·μm) in the second case) and only moderate channel mobilities (on the order of 24.7 cm 2 ·V –1 ·s –1 ) were achieved with these methods. , Considerable work has also been done in other directions, such as dielectric engineering, utilizing high-k materials to electrostatically reduce impurity scattering in MoS 2 devices. , …”

Section: Introductionmentioning

confidence: 99%

“…13,14 Considerable work has also been done in other directions, such as dielectric engineering, utilizing high-k materials to electrostatically reduce impurity scattering in MoS 2 devices. 15,16 In this work, we demonstrate an alternative path to competitive flexible MoS 2 devices, namely, shaping and using onsite high-performance hybrid (liquid/solid-state) MoS 2 channels directly inside amorphous precursors of relative impurity. To achieve this, a processing protocol involving low thermal budget annealing and ionic liquid doping is developed and applied.…”

Section: Introductionmentioning

confidence: 99%

Low-Cost, High-Gain MoS₂ FETs from Amorphous Low-Mobility Film Precursors

Balliou

Papadimitropoulos

Regoutz

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

With the aggressive invasion of thin film transistors (TFTs) in the rapidly altering/disposable portable electronics, displays, smartphones, and wearable market, cost reduction has evolved into a challenge as much as electrical properties' improvement. Therefore, it is not surprising that processes requiring expensive equipment and energy-intensive processes are abandoned in favor of room-temperature (RT) approaches, liquidphase deposition, and colloids. Despite being cheaper, the latter suffer from controllability, performance, and large contact resistance issues, deteriorating the quality of the final product. To meet the trends while not compromising the performance, we fabricate a MoS 2 -based ionic liquid-gated TFT with an ON-current of 1.5 × 10 4 A for holes and a field-effect mobility of 64.3 cm 2 •V −1 • s −1 at RT in a hybrid liquid−solid-state three-dimensional (3D) topology utilizing low-energy expenditure impurity-tolerant processes. The device addresses the weakness of unattainability of P-type conduction in MoS 2 , thereby extending its pertinency to PN diodes and complementary integration logic. In addition, photoenabled switching and memory functionality are demonstrated and detailed material and electrical properties are investigated. The herein presented advanced architecture is, to the best of our knowledge, the first low-cost, high-gain MoS 2 metal−oxide−semiconductor field-effect transistor (MOSFET) based on amorphous low-mobility film precursors that enables high-performance multifunctional stackable MOSFETs on any kind of processing-sensitive, plastic, and/or flexible substrate.

show abstract

High-performance Te-doped p-type MoS2 transistor with high-K insulators

Cited by 13 publications

References 41 publications

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction

Low-Cost, High-Gain MoS₂ FETs from Amorphous Low-Mobility Film Precursors

Contact Info

Product

Resources

About

High-performance Te-doped p-type MoS2 transistor with high-K insulators

Cited by 13 publications

References 41 publications

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction

Low-Cost, High-Gain MoS2 FETs from Amorphous Low-Mobility Film Precursors

Contact Info

Product

Resources

About

Low-Cost, High-Gain MoS₂ FETs from Amorphous Low-Mobility Film Precursors