High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Abstract

Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.

Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes

“…Several techniques are available for depositing ZnO coatings onto anodized aluminum oxide membranes, including pulsed laser deposition (PLD), 18 ion beam sputtering, 19 plasma chemical vapor deposition (CVD), 20 and spin coating 21 . ALD has previously been used to deposit nanometer-thick coatings of ZnO on polymer nanofibers with no alteration to the underlying nanofiber structure 22 .…”

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

“…However, owing to the scarcity of indium in earth, tin was then proved to be a suitable replacement for indium . Unfortunately, solution‐processed tin‐based oxides need relatively high annealing temperatures (≈500 °C) to achieve high‐quality thin films, which limits their applications on flexible substrates . Unlike indium precursors, the commercially available tin salt (Sn 2+ ) is chloride, which requires higher decomposition temperatures compared with the corresponding nitrates or acetates .…”

Superfast Room‐Temperature Activation of SnO2 Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics

“…The characteristic peaks of Sn 4+ 3d 5/2 and Sn 4+ 3d 3/2 (488.0 and 496.5 eV) were identically recorded in T‐ and P‐SnO 2 TFs without shift, and O 1s peaks were clearly observed at 531.4 eV, which roughly suggests that the pure SnO 2 TFs formed regardless of the annealing method. To better understand the difference in chemical bonding of the two films, the O 1s peaks were deconvolved from the two spectra, where the individual peaks at lower and higher binding energies were originated from the lattice oxygen atoms in a fully coordinated environment (MOM), and the hydroxide species (MOH), respectively . The peak for MOM backbones, serving as electron conductance pathways, was more prominent in P‐SnO 2 TF than T‐SnO 2 , TF and the peak corresponding to MOH, playing a role as shallow trap sites, was slightly weak in the P‐SnO 2 TF.…”