High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

Abstract

In this paper, the trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Compared with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench besides the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's FOM value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimum parameters of device structure, a high Baliga's FOM value of 2.28 GW/cm2 is designed. Therefore, the proposed sidewall enhanced trench JBS diode is promising for diamond power electronics applications.