High-performance triboelectric nanogenerator with optimized Al or Ti-embedded silicone tribomaterial

Surface engineering of PDMS for improved triboelectrification

“…36 The order of chosen additional electrodes and ITO in the triboelectric series is the following: ITO > Cu > Ni > Ti > Al. 37–39 The results indicate that the highest charge density was observed when ITO was used as the substrate (0.7 nC cm −2 ) and charge density generally follows the order of material placement in the triboelectric series with Ni as an exception (Fig. S6, ESI†).…”

A Triboelectric Sensor with Double Bubble Structure Applied in a High Security Double Lock System

“…32 Meanwhile a further increase in thickness make the friction material stiff, thus reducing the deformation in the interface region. 33 Here, the optimum thickness is 0.82 mm, owing to a combination of the charge transfer characteristics and the different levels of interfacial deformation versus thicknesses.…”

“…The effects of the dielectric material thickness on output performance can be explained by the following reasons: First, the thickness of the frictional electric material affects the effective contact area during the contact charging process, and the effective contact area can increase the charge transfer between the frictional electric materials, thus intensifying the polarization . Meanwhile a further increase in thickness make the friction material stiff, thus reducing the deformation in the interface region . Here, the optimum thickness is 0.82 mm, owing to a combination of the charge transfer characteristics and the different levels of interfacial deformation versus thicknesses.…”

Boron Minerals with Different Crystal Structures as Performance Manipulators in Triboelectric Nanogenerators

“…The output performance of NBO-doped TENGs was determined by a Rigol DS4014 oscilloscope with internal resistance (R in ) of 10 MΩ. As stated in previous studies, [43,49] springassisted vertical contact-separation mode was used. In the no-load condition, the internal resistance of the measuring instrument (R in = 10MΩ) is accepted as the load.…”