High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process

Zhang, Qian; Xia, Guodong; Li, Lubin; Xia, Wenwen; Gong, Hongyu; Wang, Sumei

doi:10.1016/j.cap.2018.10.012

Cited by 43 publications

(19 citation statements)

References 31 publications

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“…While this mobility can be compared to that of our previous research on spin coated-(1.05 cm 2 V −1 s −1 ) and inkjet processed-(1.2 cm 2 V −1 s −1 ) ZTO TFT with Ag screen-printed S/D 21 , it was lower than that of other solution processed ZTO with vacuum deposited S/D 24 . The improved mobility value of their TFT devices may be explained due to two main reasons: (1) tighter contact between ZTO and metal S/D, and better connection of metal particles in vacuum and (2) lower work function (ϕ) 24 difference between S/D electrode and ZTO semiconductor compared to our devices, in which electron carriers have to overcome to be injected into the semiconductor layer (ϕ A1 = 4.28 eV 25 , ϕ ZTO = 4.35 eV 23 , ϕ Ag = 4.6 eV 25 ). Turn-on voltage, which is gate voltage required to turn on/off the transistor in a switching application, is of around 4 V with our device.…”

Section: Resultsmentioning

confidence: 99%

Patterning of High-Viscosity Silver Paste by an Electrohydrodynamic-Jet Printer for Use in TFT Applications

Can

Nguyen

Choi

2019

Sci Rep

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Electrohydrodynamic (EHD) jet printing has a variety of benefits compared to conventional inkjet techniques, such as high resolution and the ability to work with high-viscosity pastes. In this work, Ag nanoparticles with 4000 cPs were chosen because they are printable on various substrates for electronic devices. The effects of additive on the high-viscosity Ag paste formulation were investigated, and pattern lines narrower than 100 μ m were achieved by EHD-jet printing with an average sheet resistance of 0.027 Ω □ −1 . Furthermore, solution-processed oxide TFTs were fabricated with EHD jet-printed Ag electrodes for the first time. The electrical properties obtained were a current ratio of 1.5 × 10 6 , a mobility of approximately 1 cm 2 V −1 s −1 , a threshold voltage of 21.5 V, and a subthreshold slope of 3.05 V dec −1 .

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Section: Resultsmentioning

confidence: 99%

Patterning of High-Viscosity Silver Paste by an Electrohydrodynamic-Jet Printer for Use in TFT Applications

Can

Nguyen

Choi

2019

Sci Rep

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“…Nevertheless, the fabrication of ZTO films using sputtering is a complex manufacturing process, involving a high vacuum. Hence, inexpensive and straightforward solution-based processes for ZTO synthesis have been investigated [ 41 , 42 , 43 ]. In the case of ZTO, however, patterning is complicated with solution process-based film synthesis, and ZTO crystallizes at approximately 500 °C.…”

Section: Zto Film and Applicationsmentioning

confidence: 99%

“…The sputtering method requires a high-cost and complex-to-fabricate vacuum process, but it enables one to obtain high uniformity in film quality [ 2 , 40 ]. Meanwhile, the solution-process approaches, such as spin coating, dipping, and bar coating, have the merit of a low-cost process [ 41 , 42 , 43 ], but these processes suffer from the difficulty of patterning. Different from the conventional solution processes, inkjet or screen printing offers simple-to-patterned deposition of the ZTO without an additional patterning process [ 46 , 48 , 49 ].…”

Section: Zto Film and Applicationsmentioning

confidence: 99%

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

Seo

Yoo

2022

Membranes

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Zinc–Tin Oxide (ZTO) films potentially offer desirable properties for next-generation devices and are considered promising candidates due to the following merits: (I) zinc and tin are abundant on Earth, with estimated reserves of approximately 250 million tons and 4.3 billion tons, respectively, (II) zinc and tin are harmless to the human body, and (III) large-area manufacturing with various synthesis processes is available. Considering the advantages and promises of these ZTO films, this review provides a timely overview of the progress and efforts in developing ZTO-based electronic and energy devices. This review revisits the ZTO films used for various device applications, including thin-film transistors, memory devices, solar cells, and sensors, focusing on their strong and weak points. This paper also discusses the opportunities and challenges for using ZTO films in further practical electronic and energy device applications.

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“…Transparent Conductive Oxides (TCO) are typically materials having high optical transparency (80-90%) in the visible region, the wide band gap (because of the high electronegativity of oxygen in n-type TCOs, typically Eg ≥ 3.1 eV) and high electrical conductivity (Ikhmayies 2017). In the last two decades, interest in multicomponent TCOs such as Zinc Tin Oxide, Indium Tin Oxide (Sofi et al 2018), Indium Zinc Oxide (Craciun et al 2014, Zhang et al 2019 has been dramatically increased (Altınkök and Olutaş 2020). Among these TCOs, a-IGZO (amorphous-Indium Gallium Zinc Oxide) has emerged as a encouraging candidate, with the high mobility of this material (Sheng et al 2019).…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

Yiğit¹,

Gündoğdu²,

Kılıç³

2021

Afyon Kocatepe University Journal of Sciences and Engineering

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In this study, IGZO thin films were produced on SLG and p-Si wafer at low temperature, under oxygen gas pressure of 5×10 -2 and 7×10 -2 mbar, using PLD technique and these thin films were annealed at 300 o C temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was deposited under oxygen pressure in 7×10 -2 mbar and not annealed, and − curves of this diode in darkness and under the illumination condition were obtained and then its barrier height and idelaity factor were calculated. In an illumination condition, , and Ф values of IGZO/Si heterojunction diode were calculated by the traditional − , Norde and Cheung Cheung methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.

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High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process

Cited by 43 publications

References 31 publications

Patterning of High-Viscosity Silver Paste by an Electrohydrodynamic-Jet Printer for Use in TFT Applications

Patterning of High-Viscosity Silver Paste by an Electrohydrodynamic-Jet Printer for Use in TFT Applications

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

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