High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Lin, Yen‐Hung; Faber, Hendrik; Zhao, Kui; Wang, Qingxiao; McLachlan, Martyn A.; Anthopoulos, Thomas D.

doi:10.1002/adma.201301622

Cited by 160 publications

(183 citation statements)

References 38 publications

Supporting

Mentioning

173

Contrasting

Order By: Relevance

“…We have recently demonstrated the ability to grow ultra‐thin layers of ZnO by spin casting a suitable precursor solution 31. Using the same aqueous precursor route, we have grown polycrystalline ZnO layers with thicknesses in the range of 3–10 nm ( Figure 1 a) at 180 °C (see Experimental Section).…”

Section: Resultsmentioning

confidence: 99%

“…The bottom‐gate‐staggered device geometry used was similar to that used for transistors made on Si/SiO 2 with only exceptions being the gate electrode and gate dielectric materials employed. Because of the thin (≈25 nm) and high‐ k (≈9) nature of the bilayer AlO X /ZrO 2 gate dielectric ( C i ≈235 nF cm −2 ),31 as‐prepared QSL‐I/III transistors operate at significantly reduced voltages ( Figure 7 a). QSL‐I transistors are found to exhibit consistently slightly lower mobility than QSL‐III devices with a mean value (μ SAT(mean) ) of ≈37 cm 2 V −1 s −1 as compared to the record value of ≈40 cm 2 V −1 s −1 for QSL‐III devices (Figure 7b).…”

Section: Resultsmentioning

confidence: 99%

“…We note that both mobility values are higher than those obtained for SiO 2 ‐based transistors (Figure 5c). This difference is most likely attributed to improved microstructure of the semiconducting layers due to the epitaxial‐like growth on the top of the polycrystalline dielectric 31, 47, 62, 63, 64. The low operating voltage transistors also exhibit respectable on/off current ratios (≈10 4 ) and mean subthreshold swings (SS = d V G /d[log( I D )]) of ≈275 mV dec −1 and ≈160 mV dec −1 for QSL‐I and QSL‐III devices (Figure S18, Supporting Information), respectively.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

et al. 2015

Self Cite

View full text Add to dashboard Cite

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…For over a decade, zinc oxide (ZnO) has been at the center of significant research efforts, owing to its optical transparency and its potential utilization in a range of opto/electronics including Schottky diodes [1][2][3] , lasers 4 , thin-film transistors (TFTs) 5 and piezoelectric devices. 6 Schottky diodes, in particular, are currently receiving increasing attention due to their potential for application in radio frequency (RF) electronics, optoelectronics and high power electronics but also because they present an interesting platform for material characterization.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Semple

Rossbauer

Anthopoulos

2016

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Much work has been carried out in recent years in fabricating and studying the Schottky contact formed between various metals and the n-type wide bandgap semiconductor zinc oxide (ZnO). In spite of significant progress, reliable formation of such technologically interesting contacts remains a challenge. Here, we report on solution-processed ZnO Schottky diodes based on a coplanar Al/ZnO/Au nano-gap architecture and study the nature of the rectifying contact formed at the ZnO/Au interface. Resultant diodes exhibit excellent operating characteristics, including low-operating voltages (±2.5 V) and exceptionally high current rectification ratios of >10 6 that can be independently tuned via scaling of the nano-gap's width. The barrier height for electron injection responsible for the rectifying behaviour is studied using current-voltage-temperature and capacitance-voltage measurements (C-V) yielding values in the range of 0.54-0.89 eV. C-V measurements also show that electron traps present at the Au/ZnO interface appear to become less significant at higher frequencies, hence making the diodes particularly attractive for high frequency applications. Finally, an alternative method for calculating the Richardson constant is presented yielding a value of 38.9 A cm -2 K -2 which is close to the theoretically predicted value of 32 A cm -2 K -2 . The implications of the obtained results for the use of these coplanar Schottky diodes in radio frequency applications is discussed.2

show abstract

“…1(b). CAPS, OCAPS, OPS and OAPS films were formed onto pre-patterned Al gate electrodes [14][15][16][17] μm, respectively.…”

Section: Transistor Fabrication and Characterizationmentioning

confidence: 99%

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Jeong

Pearson

Kim

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Further information on publisher's website:http://dx.doi.org/10.1021/acsami.5b10520 Publisher's copyright statement: This document is the Accepted Manuscript version of a Published Work that appeared in nal form in ACS Applied Materials and Interfaces, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the nal edited and published work see http://dx.doi.org/10.1021/acsami.5b10520. Additional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

show abstract

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Cited by 160 publications

References 38 publications

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Contact Info

Product

Resources

About

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Cited by 160 publications

References 38 publications

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Contact Info

Product

Resources

About

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors