High‐Performing Self‐Powered Photosensing and Reconfigurable Pyro‐photoelectric Memory with Ferroelectric Hafnium Oxide

Abstract

With highly diverse multifunctional properties, hafnium oxide (HfO2) has attracted considerable attention not only because of its potential to address fundamental questions about material behaviors, but also its potential for applied perspectives like ferroelectric memory, transistors, and pyroelectric sensors. However, effective harvesting of the pyro‐photoelectric effect of HfO2 to develop high‐performing self‐biased photosensors and electric writable and optical readable memory has yet to be developed. Here, a proof‐of‐concept HfO2‐based self‐powered and ultrafast (response time ≈ 60 µs) infrared pyroelectric sensor with a responsivity of up to 68 µA W−1 is developed. In particular, temporal infrared light illumination induced surface heating and, in turn, change in spontaneous polarization are attributed to robust pyro‐photocurrent generation. Further, controllable suspension and reestablishment of the self‐biased pyro‐photocurrent response with a short electric pulse are demonstrated, which offers a conceptually new kind of photoreadable memory. Potentially, the novel approach opens a new avenue for designing on‐demand pyro‐phototronic response over a desired area and offers the opportunity to utilize it for various applications, including memory storage, neuromorphic vision sensors, classification, and emergency alert systems.

Photovoltaic memristors based on photoelectric synaptic plasticity of a bulk photovoltaic effect device

“…55,56 The results show that the photovoltaic plasticity of PVM exhibits high sensitivity and synaptic learning ability, which makes it potentially useful for memory storage, computing in memory and neuromorphic vision sensors. 57,58…”

Ultrahigh-Speed Near-Infrared Electrodynamic Solid-State Trans-Memory

“…It is known that the human eye is not capable of sensing NIR light . However, importantly, the regulation of NIR light offers a possibility to apply our device for optical communication, since this range of wavelengths is commonly used for transmission because of its low energy dissipation in the optical fiber and air. − Therefore, for practical implementation, the device was inserted between the NIR light source and the sensor, as depicted schematically in Figure a.…”

2D Oxides for Electronics and Optoelectronics

“…[ 21 ] Recently, researchers found that HfO 2 maintains ferroelectricity even with a thickness of less than 5 nm, which means that it has good application prospects in nonvolatile ferroelectric memory devices. [ 68 ] Figure 4e shows the bulk P–V (polarization vs. applied potential) hysteresis curves of the HfO 2 ‐based device with different scanning voltage ranges. A typical hysteresis loop appeared in the P–V results and loop opening improved with increasing scanning range.…”

“…Reproduced with permission. [ 68 ] Copyright 2021, Wiley‐VCH. f) Theoretically calculated I ds – V ds characteristics of 2D ZnO piezotronic devices under a series of compressive strains on the channel.…”

“…e) The bulk P-V hysteresis curves with different scanning voltage ranges. Reproduced with permission [68]. Copyright 2021, Wiley-VCH.…”