High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

Xie, Ting; Hasan, Rezaul; Qiu, Botong; Arinze, Ebuka S.; Nguyen, Nhan V.; Motayed, Abhishek; Thon, Susanna M.; Debnath, Ratan

doi:10.1063/1.4938129

Cited by 43 publications

(17 citation statements)

References 25 publications

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“…A novel self‐powered photodetector that works without an external power source, which can meet the demands of a small size, reduced weight, and low power consumption for next‐generation nanodevices, is being widely studied. One kind of self‐driven photodetector has been designed by utilizing the photovoltaic effect . According to the charge separation features of the interface, the current self‐driven photosensors based on the photovoltaic effect can be classified into three types: Schottky junction, p–n junction, and photoelectrochemical (PEC) cell.…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered Nanoscale Photodetectors

Tian

Wang

Chen

et al. 2017

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Novel self‐powered nanoscale photodetectors that can work without an external power source, which have great application potential in next‐generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state‐of‐the‐art research results on self‐powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal–semiconductor and semiconductor–graphene junctions. Next, recent developments of p–n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo‐phototronic effect enhanced photodetection performances of Schottky junctions and p–n junctions are discussed. Then, significant results on the photoelectrochemical‐cell‐based photodetector and integrated self‐powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self‐powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

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Section: Introductionmentioning

confidence: 99%

Self‐Powered Nanoscale Photodetectors

Tian

Wang

Chen

et al. 2017

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“…SnO2 has a tetragonal crystal structure with lattice constants: a = 4.746 Å and c = 3.176 Å [20]. CuOx/SnOx junctions have received much attention as gas sensors [21] and photo detectors [22].…”

Section: Cuo X and Sno X Thin Filmsmentioning

confidence: 99%

“…Researchers have studied methods such as nanowire growth [24], doping [27], and nano cluster growth [22].However, to our best knowledge, little work has been done to form multi--band gap single junctions of oxide thin films. To improve efficiency of CuOx solar cell, we intend to form a multi--band gap gradient Cu/SnOx thin film.…”

Section: Cuo X and Sno X Thin Filmsmentioning

confidence: 99%

Fabrication and Characterization of Gradient Oxide Thin Films

Eng¹

2016

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“…The optics and the lock in technique used in this experiment, is similar to standard photodetection methods described in literature. [11][12][13] The device was mounted on a 3D nanopositioning stage, which was movable in x,y and z directions by a computer program with a 1 μm resolution to record spatial variation images. External batteries were z E-mail: rezaul1206@gmail.com used to bias the drain and gate of FET under study.…”

Section: Methodsmentioning

confidence: 99%

THz Imaging for Failure Analysis of RF Circuit

Hasan

Fahad

Rao

2017

ECS J. Solid State Sci. Technol.

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It is shown that sub-THz images of a GaN/AlGaN RF power FET allow one to unambiguously identify which part of the device is operational, when we purposely disconnect different portions of the device from the power supply. The effect is explained by a combination of factors including the contact pad geometry, orientation of bonding wires, and distribution of channel current in different portions of the device and their impact on coupling of THz radiation into the device. This work paves the way for potential application of THz imaging for failure analysis of RF circuit. © The Author(s) 2-4 Many of these applications exploited the unique properties of terahertz radiation which include the transparency of common packaging materials, and unique spectral fingerprints of many chemicals in terahertz range. 5 Understanding the mechanism of coupling of radiation is another important application of THz imaging. [6][7][8] The resolution of the THz imaging in the free space is limited by the diffraction limit and could not be any smaller than a half of the wavelength. However, designing a specific metal layout at the surface may allow excitation of the evanescent THz waves, providing the subwavelength resolution imaging capability. Using a field effect transistor for sub-THz imaging was demonstrated in literature. 4,9,10 In this work, for the first time, the potential application of THz imaging for failure analysis of an RF circuit has been demonstrated. The shift of the THz images obtained for different configurations was explained by the effects of contact pad geometry and bonding wire orientation on coupling of sub-THz radiation and the sensitivity of photoresponse on drain voltage in each channel of the device. It was shown that small variation in the distribution of the total drain current between the channels would cause noticeable distortion of the sub-THz responsivity image of the device under study. Scanning images of different devices in the RF circuit and comparing them with the images of the etalon device, it will be possible to identify the defective devices, as well as the possible locations of defects. This will create an opportunity for the noninvasive and nondestructive failure analysis of power RF circuits using sub-THz radiation. With further increase in the frequency and the spatial resolution, the analysis of smaller devices will also become possible. Experimental300 GHz CW radiation beam, modulated by a mechanical chopper with a modulation frequency of 200 Hz was focused on the device using a parabolic mirror. The radiation-induced voltage change at the drain of the device, caused by excitation and rectification of plasmonic oscillations in the device channel, 14,15 was recovered by a lock-in amplifier. The optics and the lock in technique used in this experiment, is similar to standard photodetection methods described in literature. 11-13The device was mounted on a 3D nanopositioning stage, which was movable in x,y and z directions by a computer program with a 1 μm resolution to record spatial varia...

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High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

Cited by 43 publications

References 25 publications

Self‐Powered Nanoscale Photodetectors

Self‐Powered Nanoscale Photodetectors

Fabrication and Characterization of Gradient Oxide Thin Films

THz Imaging for Failure Analysis of RF Circuit

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