High-Power 1.5-$\mu$ m Broad Area Laser Diodes Wavelength Stabilized by Surface Gratings

Aho, Antti T.; Viheriälä, Jukka; Virtanen, Heikki; Uusitalo, Topi; Guina, Mircea

doi:10.1109/lpt.2018.2870304

Cited by 11 publications

(6 citation statements)

References 13 publications

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“…The sensors also typically incorporate a III-V infrared light emitter, and such sensors are utilized in diverse industrial areas like aerospace, automotive, and security. [234][235][236][237][238][239][240][241] The surface region of III-V crystals have again a significant role in the IR detector operation. [242][243][244][245][246] III-V surfaces cause losses of the photogenerated carriers via non-radiative recombination processes (Figure 1).…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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The control of interfacial physicochemical properties associated with device materials to minimize the impact of point defects on device performance has been a dominant theme in the semiconductor industry.The control of the density of such defects for silicon has been well established for metal oxidesemiconductor field-effect device applications through deliberate reactions with chemically congruent species, such as hydrogen. In contrast, the control of interfacial defects for technologically important III-V device materials is still an active area of research. Performance criteria for the III-V devices are demanding in terms of energy efficiency, material consumption, sensitivity, and speed. The surface reactions of III-V crystals, including the oxidation, are typically known to result in performance limitation for devices, causing significant degradation due to high defect-level densities at the surfaces/interfaces, in contrast to high quality bulk crystal regions. Here, we discuss the approach of utilizing atomically thin, ordered oxide interfacial layers of III-V compound semiconductors, since they provide a unique opportunity for metal-oxide semiconductor applications, compared to the more common approach to avoid the surface oxidation. The long-range ordered oxide interfaces have been obtained by

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Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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“…For eye safe LIDAR applications, spectral control of the laser output may also need to be implemented, which can be achieved by including a Bragg reflector in the laser cavity without compromising the output power [25].…”

Section: Experimental and Simulationsmentioning

confidence: 99%

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Hallman

Ryvkin

Avrutin

et al. 2019

IEEE Photon. Technol. Lett.

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We report first experimental results on a highpower pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 µm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 µm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

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“…Therefore, reducing the emission wavelength range of the laser source enables a significant increase of the signal-to-noise ratio. There are several ways to achieve this, like precise control of the device temperature via a thermo-electric cooler, internal grating structures [6,7], external wavelength-selective feedback [8], or even different diode laser device concepts like distributed feedback (DFB) lasers [4,9] and vertical cavity surface emitting lasers (VCSELs, [10,11]). Many of these methods cannot be used with monolithically stacked waveguides or come at the expense of higher system complexity, cost, or performance trade-offs.…”

Section: Performance Of Pulsed 3-stack Lasers With Stabilized Emissio...mentioning

confidence: 99%

Advances in 9xx nm edge-emitting high-power pulse laser diodes for LiDAR applications

Lauer,

Kaufmann,

Fröhlich

et al. 2023

High-Power Diode Laser Technology XXI

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High-Power 1.5-$\mu$ m Broad Area Laser Diodes Wavelength Stabilized by Surface Gratings

Cited by 11 publications

References 13 publications

Passivation of III–V surfaces with crystalline oxidation

Passivation of III–V surfaces with crystalline oxidation

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Advances in 9xx nm edge-emitting high-power pulse laser diodes for LiDAR applications

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