High-Power 20-100-MHz Linear and Efficient Power-Amplifier Design

Sahan, Necip; İnal, Mehmet Erim; Demır, Şımşek; Toker, C.

doi:10.1109/tmtt.2008.2002238

Cited by 29 publications

(12 citation statements)

References 11 publications

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“…The antenna was designed on a FR4 substrate with a larger dielectric constant than the Rogers substrate we use in our design. In [5], a CPW-fed monopole antenna with two asymmetric U-shaped strips was also designed for UWB wireless applications. The antenna had a relatively larger size of 25.5 3 23 5 586.5 mm 2 on a FR4 substrate and achieved a bandwidth from 3 to 12.9 GHz with stable gain.…”

Section: Resultsmentioning

confidence: 99%

A Full X‐Band Power Amplifier with an Integrated Guanella‐Type Transformer and a Predistortion Linearizer In 0.18‐µM CMOS

Chung

Kuo

Chiou

2013

Micro & Optical Tech Letters

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A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc TM 0.18-mm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P 1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm 2 .

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Section: Resultsmentioning

confidence: 99%

A Full X‐Band Power Amplifier with an Integrated Guanella‐Type Transformer and a Predistortion Linearizer In 0.18‐µM CMOS

Chung

Kuo

Chiou

2013

Micro & Optical Tech Letters

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“…The amplifier is fed by a dc voltage source (V IN ) to ideally create a current source through a choke for what is essentially a switched parallel-resonant circuit. A push-pull configuration is advantageous because Resonance is achieved through the centertaps of two transformers; although the use of transformers as combiners in RF power amplifiers is well-known [36], [37], consideration and analysis in their design for a particular topology is required.…”

Section: Principles Of Operationmentioning

confidence: 99%

Quad-switch push-pull (QSPP) RF amplifier with direct, simultaneous modulation of phase and pulse position for spread-spectrum power applications

Avestruz

Chang

Leeb

2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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We present a new RF power amplifier for spread spectrum applications, including wireless power transfer with low electromagnetic interference (EMI). The amplifier delivers half sine wave voltage pulses of either polarity through direct pushpull modulation of phase and pulse position. EMI is a concern not only from a regulatory perspective, but also in medical and other critical environments. The voltage pulses can be optimized by a variety of methods for specific spectral characteristics to create a current, and hence a high frequency magnetic field with a spread spectrum. The topology takes advantage of the inherent characteristics of GaN FET devices.

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“…Despite their great advantages, the methodologies provide poor output power and power-added efficiency. To overcome these issues, a broadband PA design that uses combined structures of lumped element networks and impedance transformers was proposed [4]. In that case, the methodology requires both impedance transformers and reactance-eliminating circuits because a lumped circuit removes the reactive part of a power device, and the transformer converts its real part to the system impedance.…”

Section: Introductionmentioning

confidence: 99%

Design of an ultra-broadband power amplifier using distributed network synthesis

Kim

2013

IEICE Electron. Express

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This paper presents a methodology for designing ultrabroadband power amplifiers (PAs) based on distributed network synthesis and offers impedance matching of a power device by parasitic absorption. For the synthesis of broadband matching circuits, transfer functions of distributed networks are provided using an equal-ripple approximation, and power device models are derived using negative-image modeling. An impedance-matching circuit that absorbs power device models can be synthesized by properly choosing the minimum insertion loss (MIL) and ripple parameters of the transfer function. As an example, distributed network synthesis is applied to the design of an ultra-broadband PA, and experiments are carried out.

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High-Power 20-100-MHz Linear and Efficient Power-Amplifier Design

Cited by 29 publications

References 11 publications

A Full X‐Band Power Amplifier with an Integrated Guanella‐Type Transformer and a Predistortion Linearizer In 0.18‐µM CMOS

A Full X‐Band Power Amplifier with an Integrated Guanella‐Type Transformer and a Predistortion Linearizer In 0.18‐µM CMOS

Quad-switch push-pull (QSPP) RF amplifier with direct, simultaneous modulation of phase and pulse position for spread-spectrum power applications

Design of an ultra-broadband power amplifier using distributed network synthesis

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