High-power 660-nm laser diodes for recordable dual layer DVDs

Shibata, K.; Yoshida, Y.; Sasaki, M.; Ono, K.; Horie, J.; Yagi, T.; Nishimura, Takuya

doi:10.1109/jstqe.2005.853779

Cited by 8 publications

(1 citation statement)

References 7 publications

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“…The green‐gap is not only a problem for LEDs, but also for LDs. Figure shows the power conversion efficiency versus wavelength for the best reported InGaN and AlInGaP LDs that shows a lack of efficient emitters at green‐gap wavelengths. The congruent green‐gap problem in LDs and LEDs is of no surprise, because the spontaneous emission rate which limits LEDs is related to optical gain which limits LDs.…”

Section: Discussionmentioning

confidence: 99%

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer

Tsao

2015

Physica Status Solidi (a)

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III‐nitride laser diodes (LDs) are an interesting light source for solid‐state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light‐emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor‐converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.

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Section: Discussionmentioning

confidence: 99%

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer

Tsao

2015

Physica Status Solidi (a)

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Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Chen

et al. 2009

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Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

Kim

Park

Lee

et al. 2006

Journal of Applied Physics

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An In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-well (MQW) structure grown by molecular beam epitaxy using a digital alloy method was parametrically investigated by photoluminescence (PL) measurement performed in a temperature range of 10–290K. The PL peak energies did not change with increasing temperature up to 60K, while the PL peak energy monotonously decreased with increasing temperature beyond 60K. From the curve fit of the linewidth full width at half maximum of the PL peak, it was observed that the homogeneous broadening of In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW with digital alloy barriers due to scattering by longitudinal optical phonons was smaller than that of InGaAs∕InGaAlAs MQW with digital alloy barriers. This is in accordance with the existence of a relatively weak phonon-related PL peak in the PL spectrum of InGaAlP digital alloy, as compared with InGaAlAs digital alloy. The fit of the integrated PL intensity shows the occurrence of a nonradiative recombination process with an activation energy E1=24.4meV up to 60K. On the other hand, the process of nonradiative recombination with an activation energy E2=109meV occurred above 60K, which is in good agreement with one-half of the calculated total confinement energy ΔE of the electron-hole pair in the quantum well (∼108meV). The In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW structure with digital alloy barriers has larger activation energy (E2=109meV) than In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW (E2=90meV) with analog alloy barriers. Therefore, the thermal emission of carriers into the barrier can be reduced at temperatures above 60K due to the high effective barrier height.

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High-power 660-nm laser diodes for recordable dual layer DVDs

Cited by 8 publications

References 7 publications

Advantages of III‐nitride laser diodes in solid‐state lighting

Advantages of III‐nitride laser diodes in solid‐state lighting

Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

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