High–Power 792 nm Fiber–Coupled Semiconductor Laser

Abstract

The pumping of Tm-doped crystal or fiber by a 792 nm semiconductor laser is an important way to generate a mid-infrared laser, which is widely used in various fields. In this paper, a high–power 792 nm fiber–coupled semiconductor laser module was successfully fabricated with the output power of 232 W at a 10 A continuous current and the electro-optic conversion efficiency of 48.6%. The laser module is coupled with 24 chips into a fiber by spatial multiplexing and polarization combination technology. For a single emitting laser chip, the continuous wave (CW) output power and threshold current are 10.45 W at 10 A and 1.55 A, respectively. A polarization as high as 94% can also be realized, which is more suitable for laser spatial beam combining. The laser module was aged for more than 4000 h at 12 A and 25 °C without obvious power degradation.

Preface for Special Issue: Advancements in Semiconductor Lasers

“…This device not only demonstrates superior beam quality but also maintains high power output. Moreover, Liu et al reported the successful fabrication of a 792 nm semiconductor laser with an impressive output power of 232 W and an electro-optic conversion efficiency of 48.6% [5]. Such high-power lasers hold great promise for various industrial and scientific applications.…”