High Power AlN/GaN HEMTs with record power-added-efficiency &gt;70% at 40 GHz

Harrouche, Kathia; Kabouche, Riad; Okada, Étienne; Medjdoub, Farid

doi:10.1109/ims30576.2020.9223971

Cited by 13 publications

(9 citation statements)

References 9 publications

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“…GaN is an emerging wide-bandgap material, which is suitable for high power and microwave applications in the telecommunication, radar and power switching technologies. [1][2][3] Owing to the high breakdown electric field and high saturation electron velocity, GaN-based high-electron-mobility transistors (HEMTs) exhibit an excellent output power performance at high frequencies. The next phase of GaN technology development has been attending to the growth of GaN on silicon substrates, which is eventually very economical.…”

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confidence: 99%

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Chen

Lin

Nagarajan

et al. 2021

ECS J. Solid State Sci. Technol.

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The high-frequency characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs) are investigated under ultraviolet (UV) radiation with 365 nm wavelength. When HEMTs and MIS-HEMTs are illuminated with an UV source, their drain currents increase apparently owing to the generated photocurrent. Nevertheless, they show different high-frequency response to the UV light. For HEMTs, the peak cutoff frequency (fT) and maximum oscillation frequency (fmax) of illuminated devices are 20% and 10% higher than those in dark condition, respectively, owing to the increased transconductance. For MIS-HEMTs, however, their high-frequency performances are degraded when transistors are subject to light exposure. The degradations of peak fT and fmax are around 3.7% and 18%, respectively. The small-signal model parameters relevant to the high-frequency characteristics were extracted to explain these phenomena. Additional trapped charges in the SiN gate dielectric induced by UV light would be responsible for the degraded high-frequency parameters in illuminated MIS-HEMTs. These experimental results are important for designing a suitable GaN-based HEMT for optoelectronic applications.

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confidence: 99%

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Chen

Lin

Nagarajan

et al. 2021

ECS J. Solid State Sci. Technol.

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“…More recently, Al-rich ultrathin sub-10 nm barrier heterostructures have received much attention for millimeter-wave applications [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This is because they can deliver significantly higher 2DEG sheet carrier density compared to AlGaN/GaN HEMTs while offering the possibility to highly scale the epitaxial structure as needed when using short gate lengths [ 23 , 24 , 25 ]. Therefore, further reducing the gate length to reach a higher frequency of operation requires significant changes of standard epitaxial materials and device design, such as self-aligned gates and an AlGaN back barrier [ 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

et al. 2023

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In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.

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“…[1,2] Because of the large lattice and thermal expansion coefficient mismatch between GaN and silicon carbide (SiC), silicon (Si), or sapphire substrates, GaN HEMTs are typically grown with thick buffer layers (several μm) to minimize growth defects/dislocations at the vicinity of the 2DEG. [3][4][5][6] However, a thick buffer degrades the thermal dissipation and increases the epiwafer cost. Some recent reports have demonstrated promising DC and RF performances of AlGaN/GaN HEMTs grown on SiC with a total thickness lower than 1 μm.…”

Section: Introductionmentioning

confidence: 99%

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Carneiro

Rennesson²,

Tamariz

et al. 2023

Physica Status Solidi (a)

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Submicrometer‐thick AlGaN/GaN high‐electron‐mobility transistor (HEMT) epilayers grown on silicon substrate with a state‐of‐the art vertical buffer breakdown field as high as 6 MV cm−1 enabling a high transistor breakdown voltage of 250 V for short gate‐to‐drain distances despite such a thin structure are reported. HEMTs with a gate length of 100 nm exhibit good DC characteristics with a low drain‐induced barrier, going as low as 100 mV V−1 for a VDS of 30 V. Breakdown voltages of each epilayer from the decomposed heterostructure reveals that the outstanding breakdown strength is attributed to the insertion of Al‐rich AlGaN in the buffer layers combined with an optimized AlN nucleation layer. As a result, large signal measurements at 10 GHz could be reliably achieved up to VDS = 35 V despite the use of a 100 nm gate length. These results demonstrate the potential of submicrometer‐thick buffer GaN‐on‐Si heterostructures for high‐frequency applications.

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High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Cited by 13 publications

References 9 publications

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

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