High power and high-temperature operation of GaInP/AlGaInP strained multiple quantum well lasers

Mannoh, M.; Hoshina, J.; Kamiyama, Satoshi; Ohta, Hirokazu; Ban, Yuzaburoh; Ohnaka, Kiyoshi

doi:10.1063/1.108776

Cited by 32 publications

(5 citation statements)

References 8 publications

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“…A linear fit leads to an intensity decay of 30 cm . This value is larger than typical values of AlGaInP-based laser diodes [6], [7]. We show below that the observed intensity distribution is a result of the contribution from the absorbing GaAs substrate.…”

Section: Methodsmentioning

confidence: 54%

Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes

Schad

Neubert

Eichler

et al. 2004

J. Lightwave Technol.

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Abstract-Different experimental and simulation techniques aiming at a better understanding of lateral mode absorption in light-emitting diodes (LEDs) are presented in this paper. A measurement of transmitted power versus propagation distance allows us to derive the absorption losses of LED layer structures at their emission wavelength. Two models for the observed intensity distribution are presented: one is based on scattering, whereas the other relies on selective absorption. Both models were applied to InGaN-on-sapphire-based LED structures. Material absorption losses of 7 cm 1 for the scattering model and 4 cm 1 for the absorbing-layer model were obtained. Furthermore, these values are independent of the emission wavelength of the layer structure in the 403-433-nm range. The losses are most likely caused by a thin highly absorbing layer at the interface to the substrate. In a second step, interference of the modal field profile with the absorbing layer can be used to determine its thickness ( = 75 nm) and its absorption coefficient ( 3900 cm 1 ). This method has also been tested and applied on AlGaInP-based layer structures emitting at 650 nm. In this case, the intensity decay of = 30 cm 1 includes a contribution from the absorbing substrate.

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Section: Methodsmentioning

confidence: 54%

Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes

Schad

Neubert

Eichler

et al. 2004

J. Lightwave Technol.

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show abstract

“…This reduction occurs because the separation of the quasi-Fermi level becomes more balanced between the conduction and valence bands [12]. By introducing strain, the advantages of applying strain resulted in a noteworthy decrease in the threshold current, along with enhancements in various laser performance metrics [13][14][15]. These improvements encompass heightened differential quantum efficiency, increased output powers, expanded modulation bandwidth, and reduced linewidth and chirp.…”

Section: Progress Of High-power Vcselsmentioning

confidence: 99%

Advances in high-power vertical-cavity surface-emitting lasers

Liu,

Zhao,

Tang

et al. 2024

J. Phys. D: Appl. Phys.

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Vertical-cavity surface emitting lasers (VCSELs) have emerged as a highly promising light source with extensive applications in various fields, including consumer electronics, optical communication, metrology, sensing and ranging. Their low-cost, high conversion efficiency, and compact footprint make them particularly attractive for widespread adoption. While considerable success has been made in enhancing the performance and speed of VCSELs for optical communications, achieving high-power VCSELs with properties such as high output power, single transverse mode operation, and temperature stability for remote sensing applications remains a challenging endeavor. This review aims to provide a comprehensive overview of the recent advancements in the development of high-power VCSELs. By examining the advancements in active materials, device designs, array configurations, this review seeks to shed light on the current state-of-the-art and potential avenues for further improvement in high-power VCSEL technology.

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“…In addition, the heat generated in the close vicinity of a LED junction could give rise to junction temperature, which would not only reduce the overall efficiency of the LED, but have significant effects on LED operating characteristics. [8][9][10][11][12][13][14][15] Therefore, junction temperature is a crucial factor for evaluating LEDs performances; in other words, a reliable measurement of junction temperature using an appropriate thermal model becomes extremely important. There are many different approaches to measuring junction temperature described in the literature, such as Raman spectroscopy, 16) thermal resistance measurement, 17) noncontact method, 18) and diode forward-voltage measurement.…”

Section: Introductionmentioning

confidence: 99%

Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes

Lee

Chen

2011

Jpn. J. Appl. Phys.

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The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperaturedependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs.

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High power and high-temperature operation of GaInP/AlGaInP strained multiple quantum well lasers

Abstract: Articles you may be interested inTemperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

Cited by 32 publications

References 8 publications

Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes

Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes

Advances in high-power vertical-cavity surface-emitting lasers

Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes

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