High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Liu, Huiyun; Xu, Bo; Wei, Yongqiang; Ding, Ding; Qian, Jiajun; Qin, Han; Liang, J.-Q.; Wang, Zhanguo

doi:10.1063/1.1415416

Cited by 78 publications

(32 citation statements)

References 9 publications

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] SAQDs are the result of a transition from 2D growth to 3D growth in strained epitaxial films such as Si x Ge 1Àx =Si and In x Ga 1Àx As/GaAs: This process is known as Stranski-Krastanow growth or VolmerWebber growth. 3,[15][16][17] In applications, order of SAQDs is a key factor.…”

Section: Introductionmentioning

confidence: 99%

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Friedman

2007

Journal of Elec Materi

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Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are Ge x Si 1Àx =Si and In x Ga 1Àx As/GaAs: For applications, SAQD arrays need to be ordered. The roles of crystal anisotropy, random initial conditions and thermal fluctuations in influencing SAQD order during early stages of SAQD formation are studied through a simple stochastic model of surface diffusion. Surface diffusion is analyzed through a linear and perturbatively non-linear analysis. The role of crystal anisotropy in enhancing SAQD order is elucidated. It is also found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical wetting surface height that marks the onset of non-planar film growth.

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Section: Introductionmentioning

confidence: 99%

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Friedman

2007

Journal of Elec Materi

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“…An important technological goal of research on QDs has been the development of lasers with emission at telecommunications wavelengths, i.e., 1.3-1.6 µm [11][12][13]. Many approaches have been adopted to extend the wavelength beyond the ∼1100 nm that is naturally reached by InAs QDs in GaAs.…”

Section: Introductionmentioning

confidence: 99%

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

et al. 2017

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We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic In x Ga 1-x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at higher mismatches. At low QD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

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“…1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19 For this reason, there has been a great deal of modeling work on their dynamic formation process. 20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40,41 SAQDs are fabricated by depositing a semiconductor film on a lattice mismatched substrate with a smaller band gap, the most well-known examples being Ge x Si 1−x deposited on Si and In x Ga 1−x As deposited on GaAs.…”

Section: Introductionmentioning

confidence: 99%

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Kumar¹,

Friedman²

2008

Journal of Applied Physics

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Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial self-assembled quantum dots (SAQDs), it is essential to have an accurate model that can aid further experiments and predict the trends in SAQD formation. SAQDs form because of the destabilizing effect of elastic mismatch strain, but most analytic models and some numerical models of SAQD formation either assume an elastically homogeneous anisotropic film-substrate system or assume an elastically heterogeneous isotropic system. In this work, we perform the full film-substrate elastic calculation. Then we incorporate the elasticity calculation into a stochastic linear growth model. We find that using homogeneous elasticity can cause errors in the elastic energy density as large as 26%, and for typical modeling parameters lead to errors of about 11% in the estimated value of average dot spacing. We also quantify the effect of elastic heterogeneity on the order estimates of SAQDs and confirm previous finding on the possibility of order enhancement by growing a film near the critical film height.

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High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Cited by 78 publications

References 9 publications

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

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